Allicdata Part #: | ZTX749A_J61Z-ND |
Manufacturer Part#: |
ZTX749A_J61Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 35V 2A E-LINE |
More Detail: | Bipolar (BJT) Transistor PNP 35V 2A 100MHz 1W Thro... |
DataSheet: | ZTX749A_J61Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | ZTX749A |
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The ZTX749A_J61Z is a type of single bipolar junction transistor (BJT). In general, BJTs are transistors composed of three or more terminals, or layers, of doped semiconductor materials: a base, an emitter, and a collector. BJTs are known as current-controlled current sources, meaning one type of Bjt device, the common-emitter configuration, amplifies current. The ZTX749A_J61Z is a common-emitter transistor.
The ZTX749A_J61Z is designed to operate in the low-frequency to high-frequency range and is a high-power NPN transistor. It has a maximum collector current of 1.5A (IC), a maximum DC power dissipation of 6W (PD), and a high breakdown voltage range of 80V (V(BR)CEO). Its maximum operating temperature is 175°C. The ZTX749A_J61Z has also an average current gain of 500 (hFE) at 300mA collector current.
The ZTX749A_J61Z is primarily used as an audio frequency power amplifier in a variety of applications, ranging from domestic television sets and home stereo systems to automotive and industrial products. It is also used in many RF applications such as RF amplifiers, which require powerful, low noise amplification at high frequencies. Because of its wide frequency range, the ZTX749A_J61Z is widely used in amplifiers, oscillators, and other circuits that require wide frequency range and high power.
The primary working principle of the ZTX749A_J61Z is based around its common-emitter configuration. This type of transistor amplifies current by having current flowing from the base to the emitter controls the current flowing from the collector to the emitter. The collector current is amplified by a factor of the current gain, hFE. This current gain is determined by the current flowing through the transistor, the base-emitter voltage (VBE), and the collector-base voltage (VCE). The ZTX749A_J61Z has a maximum current gain of 500 at a collector current of 300mA.
In addition to the common-emitter configuration the ZTX749A_J61Z has several other features worth noting. It is an NPN type of transistor, meaning that the emitter is connected to the negative terminal, and the collector is connected to the positive terminal. This allows the transistor to amplify a negative voltage at the emitter. The ZTX749A_J61Z also has a wide frequency range, up to 1.2 GHz, allowing it to be used in a variety of applications. Due to its wide bandwidth and wide voltage range, the ZTX749A_J61Z is ideal for use in high-power audio amplifiers, high-frequency RF amplifiers, and oscillators.
The ZTX749A_J61Z is a single bipolar junction transistor (BJT) with a wide frequency range, high current gain, high breakdown voltage, and wide operating temperature range. Its primary use is in audio and radio frequency (RF) amplifiers, oscillators, and other high-power circuits that require wide frequency range and wide voltage range. Its common-emitter configuration amplifies current for applications up to 1.2GHz with a maximum current gain of 500.
The specific data is subject to PDF, and the above content is for reference
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