ZVP4424GTA Discrete Semiconductor Products

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The ZVP4424GTA is an N-channel MOSFET device, part of a wide range of power FETs from Diodes Incorporated. It has been designed to provide superior performance in switched mode power supplies (SMPS) and over-current protection applications. The device offers a low on-state resistance, improved switching performance and greater reliability for lower total cost of ownership. This article will discuss the application field and working principle of the ZVP4424GTA.

The ZVP4424GTA is a high voltage power FET with an absolute maximum rating of 30V. It is designed to support peak currents in the range from 6A (typical), making it ideal for power supply, switching, and over-current protection applications. The device features a low on-resistance of 0.5 ohms (typical), which ensures low conduction losses and greater efficiency. It is also designed with improved ESD protection of up to 8 kV HBM, which improves the robustness of the device.

The device has a wide range of applications, such as switching and protection circuits, automotive loads, battery charging, off-line converters, power inverters and power supplies, and industrial control systems. Due to its low on-state resistance, the device will draw a minimal amount of DC power and provide increased efficiency. The improved ESD protection ensures that the MOSFET is resilient to transient high voltages and surges.

The ZVP4424GTA is an N-channel MOSFET. It works on the principle of a potential barrier formed between the drain and source. The potential barrier is created by the charge carriers most commonly known as holes or electrons. The potential barrier is created by applying a certain voltage. When this voltage is increased, it creates a potential barrier at the barrier\'s oxide-silicon interface. This potential barrier causes current conduction to decrease. The amount of current transmitted through the device can thus be controlled by the voltage applied to the gate electrode.

The ZVP4424GTA is a high voltage power FET and offers superior switching performance and superior breakdown voltage. It can withstand a drain-source voltage of 30V and is capable of handling peak currents up to 6A. The capability to handle higher currents with low on-state resistance, make the device suitable for a wide range of switching applications. The device is designed with improved ESD protection and is capable of withstanding up to 8 kV HBM.

The ZVP4424GTA device is extremely useful in SMPS applications, such as UPS, communication and data systems, as well as over-current protection and LED lighting applications. Its low on-state resistance, reliability and higher breakdown voltage make it a great choice when looking for a high performance power FET.

In conclusion, the ZVP4424GTA is a high voltage power FET with a low on-state resistance, improved switching performance and greater reliability. It is designed with improved ESD protection and can deliver peak currents in excess of 6A. The device is ideal for SMPS, AC/DC converters, over-current protection, and automotive load switching applications.

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