ZVP4525E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZVP4525E6TR-ND |
Manufacturer Part#: |
ZVP4525E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 250V 0.197A SOT-23-6 |
More Detail: | P-Channel 250V 197mA (Ta) 1.1W (Ta) Surface Mount ... |
DataSheet: | ZVP4525E6TA Datasheet/PDF |
Quantity: | 18000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 73pF @ 25V |
Vgs (Max): | ±40V |
Gate Charge (Qg) (Max) @ Vgs: | 3.45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 197mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVP4525E6TA is an advanced Field-Effect Transistor (FET) from Diodes Incorporated (also known as DI). It has a MOSFET architecture and comes in a small SOT-23 package. This device is designed primarily for use in portable electronic devices, and it has wide application in various high-performance designs.
The ZVP4525E6TA is a single N-channel enhancement mode device, meaning it can be used in either enhancement-mode or depletion-mode configurations. This versatile device can be used in a variety of applications such as in switching circuits and amplifiers. It is also suitable for use in low-noise motor control, power management, DC-DC conversion, and other analog circuits.
The ZVP4525E6TA has a maximum on-state resistance of 600 mhos with a continuous current rating of 1.5 amps. It has a typical turn-on threshold voltage of 4.4V, and an input capacitance of 4.0nC at 4.7V. This device operates with a gate-to-source breakdown voltage of 20V and a gate-to-drain breakdown voltage of 20V, with a maximum rating of 25V. The ZVP4525E6TA also has a maximum junction temperature rating of 175 °C.
The working principle of the ZVP4525E6TA is simple. When the gate voltage is below the threshold voltage, the transistor is off. When the gate voltage is above the threshold voltage, the gate-source junction breaks down, allowing current to flow between the drain and source. The voltage between the drain and source can be controlled by varying the gate voltage. This principle allows the ZVP4525E6TA to be used as an amplifier, as a switch, and in a variety of other designs.
In general, the ZVP4525E6TA is an ideal choice for a wide range of applications in devices where space is at a premium. Its small package size and low power consumption make it well-suited for use in battery-powered systems. Additionally, its high-speed switching capabilities make it a suitable choice for high-speed analog circuits, as well as for circuit designs in high-frequency applications and Class-D audio. The device’s high resistance-to-current ratio and high input impedance are also highly valuable in many designs.
To summarise, the ZVP4525E6TA is an N-channel enhancement mode FET from Diodes Incorporated that can be used in a variety of circuit designs. Its small size and low power consumption makes it suitable for use in portable electronics, while its high-speed switching capabilities make it suitable for use in a variety of analog applications. Its high resistance-to-current ratio and high input impedance also make it a valuable part of many design projects. The ZVP4525E6TA is thus an incredibly versatile and highly useful device.
The specific data is subject to PDF, and the above content is for reference
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