ZXM41N10FTA Discrete Semiconductor Products

Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	3V, 4.5V
Rds On (Max) @ Id, Vgs:	8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Vgs (Max):	±40V
Input Capacitance (Ciss) (Max) @ Vds:	25pF @ 25V
FET Feature:	--
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V

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ZXM41N10FTA is a metal-oxide-semiconductor field-effect transistor (MOSFET) device manufactured by STMicroelectronics, an international semiconductor company. It is a single-ended enhancement type device featuring low on-state resistance and improved level-speed performance. The ZXM41N10FTA is a N-channel MOSFET which has a low capacitance and a wide operating voltage range. The device is available in three configurations - single, dual, and triple.The ZXM41N10FTA is widely used in power management applications due to its superior characteristics. It can be used in a variety of power control circuitry including DC-DC conversion and AC switches. The device is also suitable for automotive applications, such as switching electric loads, in motor control applications, and in motor power supply applications.The device operates by allowing the electric field through a thin layer of material (dielectric) to control the movement of charge carriers between two terminals. A voltage applied to the gate terminal induces an electric field through the dielectric and creates a channel between the source and drain terminal and allows charge carriers to flow, thus providing conduction. The gate control of the device gives it superior on-off ratio with low power consumption. The ZXM41N10FTA has a wide array of features that make it ideal for many applications. It has a low on-resistance and low gate charge, which reduces switching losses and enhances the efficiency of power management applications. It has an improved gate drain avalanche energy rate of up to 100 volts per microsecond which makes it suitable for high surge current applications. The device has an enhanced gate-source SOA (safe operating area) and an improved thermal-resistance design with low thermal impedance which helps reduce power consumption. The ZXM41N10FTA is available in a wide range of power supply voltages which makes it suitable for a variety of applications. The device has a low gate-source capacitance, which helps reduce unwanted electrical noise in the system. The device has an enhanced VGS breakdown rating of 100 V, which increases the level of protection against damage due to overvoltage conditions. The device is also provided with a self-protective function which helps reduce erroneous current flows.The ZXM41N10FTA has a wide application thanks to its robust functionalities and performance. It is widely used in automotive, industrial, medical, and other equipment as well as in power management applications. It offers superior performance, low power consumption, and high reliability in a range of operating conditions, making it a versatile choice in many applications.In conclusion, the ZXM41N10FTA is a versatile, single-ended enhancement type MOSFET device manufactured by STMicroelectronics. It offers low on-state resistance, improved levels of speed performance, and wide operating voltage range. It is suitable for a variety of applications, from DC-DC converters to power switches, and is an ideal choice for applications requiring robust and reliable performance.

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