| Allicdata Part #: | ZXM41N10FTC-ND |
| Manufacturer Part#: |
ZXM41N10FTC |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 100V 170MA SOT23-3 |
| More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
| DataSheet: |  ZXM41N10FTC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 3V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 150mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Vgs (Max): | ±40V |
| Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 360mW (Ta) |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXM41N10FTC is a general-purpose, enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is available in a TO-220 package and is suitable for use in power management applications. It utilizes a specific type of FET structure, known as a metal-oxide-semiconductor insulated-gate field-effect transistor, or IGFET. This type of FET is also known as an insulated-gate bipolar transistor (IGBT) or an insulated-gate unipolar transistor (IGUT). The ZXM41N10FTC has an N-channel, enhanced-mode MOSFET configuration. An N-channel MOSFET consists of an N-type source and drain, which are separated by a conducting channel. A gate, which is insulated from the conducting channel by a thicker insulation layer, is used to control the current flow through the channel.
The ZXM41N10FTC is designed for use in power applications, such as motor control, power switching, and other similar applications. It is suitable for use in secondary side rectifiers, power converters, digital controllers, DC motors and other applications where enhanced current carrying capability is important. Additionally, its low on-state resistance, high breakdown voltage, and high power capability make it an attractive choice for power management applications.
The ZXM41N10FTC\'s working principle is relatively simple. When an electric field is applied to the gate of the MOSFET, the channel becomes conductive, allowing current to flow between the source and the drain. The amount of current that can flow through the channel is controlled by the gate voltage, which is the voltage applied to the gate of the FET.
The ZXM41N10FTC is a cost-effective and energy-efficient choice for power management applications. Its high performance and low on-state resistance make it suitable for high power applications, such as motor control and power switching. Additionally, its cost-effectiveness and energy-efficiency make it an attractive choice for use in cost-sensitive designs.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| ZXM41N10FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
| ZXM41N10FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
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