ZXT12N50DXTC Allicdata Electronics
Allicdata Part #:

ZXT12N50DXTC-ND

Manufacturer Part#:

ZXT12N50DXTC

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2NPN 50V 3A 8MSOP
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 3A...
DataSheet: ZXT12N50DXTC datasheetZXT12N50DXTC Datasheet/PDF
Quantity: 1000
4000 +: $ 0.43659
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.04W
Frequency - Transition: 132MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: ZXT12N50D
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXT12N50DXTC is a high-performance, cost-effective combination of bipolar NPN transistors in a single package. It is designed for use in high-power applications, offering low on-state resistance and high-current gain. The package is designed to provide enhanced thermal performance, allowing for higher current dissipation in a smaller form factor.

Application Field

The ZXT12N50DXTC is suitable for use in power applications such as power supplies, DC-DC converters, audio amplifiers, and motor control. It is also suitable for automotive applications such as electronic fuel injection (EFI) systems, lighting and immobility, as well as domestic appliances.

Working Principle

At the heart of the ZXT12N50DXTC is a PN-junction arrangement of Emitter-Base-Collector (EBC) transistors. As current passes through the EBC configuration, the PN-junction is forward biased, allowing electrons to pass from the Emitter to the Collector, creating a current flow. As the current flow increases, the voltage drop across the Collector and Emitter also increases, allowing for increased current dissipation.

This transistor array is designed to provide high power dissipation and current gain in applications requiring higher current levels. Thanks to its small form factor, the ZXT12N50DXTC is ideal for use in space-constrained applications, offering high-perfomance and cost control in a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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