ZXT10N50DE6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXT10N50DE6TATR-ND |
Manufacturer Part#: |
ZXT10N50DE6TA |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 50V 3A SOT23-6 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 165MHz 1.1W Su... |
DataSheet: | ZXT10N50DE6TA Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15073 |
6000 +: | $ 0.14033 |
15000 +: | $ 0.13514 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 2V |
Power - Max: | 1.1W |
Frequency - Transition: | 165MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Base Part Number: | ZXT10N50D |
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The ZXT10N50DE6TA is a single bipolar transistor, specifically designed for high voltage switching applications. Its high current rating of 10A allows it to withstand large inrush currents. It is capable of withstanding up to 600 Volts of blocking voltage and features a maximum collector-emitter voltage of 500 Volts. The device also features a continuous collector current of 10 Amps and a Pulsed Collector Current of 20 Amps.
The ZXT10N50DE6TA is well-suited for applications such as automobile engine control, industrial and home appliances, and power tools. It is also capable of operating in high frequency switching systems such as SMPS circuits, DC-to-DC converters, and general power supplies.
The ZXT10N50DE6TA transistor is capable of operation with a wide range of collector-emitter voltages, from 30 Volts up to 500 Volts. It is also capable of working at high pulse widths of up to 50 µs and with a junction temperature of up to 150°C. The device is also optimized for low-loss saturation and minimum transition time.
The ZXT10N50DE6TA transistors have an integrated electrodes system that ensures improved conductivity and maximum heat dissipation. It uses an advanced Gold-Mica layering method that effectively eliminates parallel paths. As a result, customers can expect improved reliability and performance, resulting in a more robust and reliable system.
The ZXT10N50DE6TA transistors use an Emitter-Base (BJT) type of biasing/amplification method. This amplifier circuit provides voltage gain by providing both an input signal and a feedback signal to the base of the transistor, which in turn adjusts the conductivity of the device. The amount of gain can vary according to the bias of the collector and emitter, as well as the frequency of the input signal, resulting in good frequency response and stable operation with low distortion.
The ZXT10N50DE6TA transistors have been designed with safety and reliability in mind. They are protected against over-voltage, over-current and over-temperature using a built-in protection circuit. This includes a built-in clamping circuit to protect the collector-emitter junction. These features make the device suitable for use in industrial and automotive products.
The ZXT10N50DE6TA is a versatile, reliable and highly efficient device that is ideal for use in high current and high voltage applications. Its high current rating and low blocking voltage makes it suitable for a variety of medium and high power applications, such as automotive engine control, DC-to-DC converters, and power tools. Its low power dissipation, high frequency response and low distortion make it ideal for use in high frequency switching systems like SMPS circuits and home appliances.
The specific data is subject to PDF, and the above content is for reference
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ZXT10N15DE6TA | Diodes Incor... | -- | 9000 | TRANS NPN 15V 4A SOT23-6B... |
ZXT13N15DE6TA | Diodes Incor... | -- | 1000 | TRANS NPN 15V 5A SOT23-6B... |
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