Allicdata Part #: | ZXT13P12DE6TC-ND |
Manufacturer Part#: |
ZXT13P12DE6TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 12V 4A SOT23-6 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 4A 55MHz 1.1W Sur... |
DataSheet: | ZXT13P12DE6TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 175mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1A, 2V |
Power - Max: | 1.1W |
Frequency - Transition: | 55MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Base Part Number: | ZXT13P12D |
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The ZXT13P12DE6TC is a single bipolar junction transistor (BJT) which is intended for use in a wide range of applications. The device has two important characteristics, namely - the collector current rating and the breakdown voltage. As a result of its two main characteristics, this device is well suited for use in power management and motor control circuits, where reliable operation of the circuit is crucial.
A bipolar junction transistor (BJT) is an elementary three-terminal solid-state device which uses the flow of electrons in a base-collector junction to modulate the amount of current flow in a collector-emitter junction. Its operation is based on the injection of minority carriers, current and voltage, from the base-collector junction to the collector-emitter junction. This injection of minority carriers results in an amplification of current.
The ZXT13P12DE6TC is a NPN type BJT. It consists of a two-layer semiconductor, when one layer is a p-type and the other is an n-type layer. The n-type side is the main region of conduction and the p-type region is the main region of injection. It has a nominal collector current rating of 12A, a breakdown voltage of 700V, and a maximum collector-emitter voltage rating of 600V.
The working principle of the device is relatively simple. When the base voltage is sufficiently positive, electrons are injected into the collector-emitter structure, creating a current flow. The collector current hat is produced is proportional to the base voltage, with the larger base voltage resulting in a larger collector voltage. The current gain of the device is also dependent on the base-collector junction voltage, with a larger base-collector voltage resulting in a higher current gain.
The ZXT13P12DE6TC device is most commonly used in power management and motor control circuits, which require the device to provide reliable current and voltage transmission. It offers high current gain and can easily be used to create an efficient current flow, allowing for reliable operation of the circuit.
The device is also widely used in other applications, such as light dimming circuits, audio amplifiers, and switching power supplies. Its high collector-emitter voltage ratings make it a suitable choice for applications where the current needs to be transmitted over a long distance, such as in the case of lighting controls.
In summary, the ZXT13P12DE6TC is a single bipolar junction transistor, which is intended for use in a wide range of applications. It has excellent current gain and breakdown voltage ratings, making it suitable for power management and motor control circuits. The device is also suitable for use in other applications, such as light dimming circuits and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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