ZXT13N20DE6TA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXT13N20DE6TA is a silicon N-channel, Power Mosfet transistor. This type of transistor is classified as a Bipolar (BJT) Single and is mainly used for high voltage and power applications. It is composed of a vertical N-channel structure, which provides high switching speed, low on-state resistance, and improved energy efficiency, making it ideal for power management and high-speed circuit applications, such as power distribution and switching, switching regulators, and amplifier designs. Additionally, its low on-state resistance also makes it suitable for low-side gate driving.

The ZXT13N20DE6TA has a maximum drain-source voltage of 600 V, a maximum gate-source voltage of 12 V, and a maximum drain current of 13 Amps. This transistor offers a maximum power dissipation of 53 Watts and an operating temperature range of -55 °C to +150 °C.

The ZXT13N20DE6TA is mainly used in power management and high-speed applications, such as motor control and switching regulator applications, switching discharge lamps, and power distribution and switching applications. The device is also suitable for power management designs by providing excellent current handling capability and low on-state resistance. Additionally, it has low switching losses and high dv/dt tolerance and thus is especially suitable for large capacitive loads applications.

The working principle of the ZXT13N20DE6TA is based on the flow of electrons from the source to the drain by the gate voltage applied to the gate. When a positive voltage is applied to the gate, the transistor turns on and current flows from the source to the drain. Then the drain current is a function of the gate-source voltage, drain-source voltage, and the on-resistance. The on-state resistance decreases with increasing drain-source voltage, making it suitable for power management designs.

In summary, the ZXT13N20DE6TA is a silicon, N-channel Power Mosfet transistor which is classified as a Single Bipolar (BJT). This device is an excellent choice for high voltage and power applications, such as power distribution and switching, switching regulator and low-side gate driving applications. It has a low on-state resistance and excellent current handling capability. Additionally, its low switching losses and high dv/dt tolerance make it suitable for large capacitive loads applications.

The specific data is subject to PDF, and the above content is for reference