ZXT10N50DE6TC Allicdata Electronics
Allicdata Part #:

ZXT10N50DE6TC-ND

Manufacturer Part#:

ZXT10N50DE6TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 50V 3A SOT23-6
More Detail: Bipolar (BJT) Transistor NPN 50V 3A 165MHz 1.1W Su...
DataSheet: ZXT10N50DE6TC datasheetZXT10N50DE6TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 1.1W
Frequency - Transition: 165MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Base Part Number: ZXT10N50D
Description

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ZXT10N50DE6TC is a type of transistor. It is categorized as Single Bipolar Junction Transistor (BJT). Transistors are widely used in various applications because they provide a low cost and easy way to amplify or switch electrical signals. In this article, we will discuss the applications and working principles of ZXT10N50DE6TC.

A bipolar junction transistor (BJT) is a three-terminal device composed of two linked diode-connected n-type and p-type semiconductor regions. It is widely used in many electronic circuits and devices because of its easy switching ability, high gain, and low power consumption. The structure of the ZXT10N50DE6TC has few differences from the standard BJT structure. ZXT10N50DE6TC has a flat base with two diodes mounted on top and two ohmic contacts, one at each end of the base. The two ohmic contacts are bonded to the two sides of the base forming the collector and emitter junctions.

The ZXT10N50DE6TC is most often used in a variety of applications including power switching, audio amplification, and low-noise amplifiers. It is suitable for higher power switching applications because of its good high-voltage and high-frequency switching performance and its low on-resistance. In addition, the ZXT10N50DE6TC is a good choice for audio amplifiers because of its low noise level and stable behavior. This device is also suitable for use in low-noise amplifiers because of its low noise performance and high gain.

The working principle of the ZXT10N50DE6TC is based on the fact that when a small current is applied to the base of the transistor, a large current is generated from the collector to the emitter. This phenomenon is known as current amplification. To illustrate how this works, consider the following example. When a small current is applied to the base of the transistor, the two diodes on the base of the transistor act as "gates" allowing current to flow from the collector to the emitter. As the current flows from the collector to the emitter, it is amplified. The larger the current flowing from the collector to the emitter, the higher the gain.

Another important feature of the ZXT10N50DE6TC is that it is capable of operating at high temperatures. This allows it to be used in high temperature environments. In addition, it is also capable of operating at high frequencies, which makes it ideal for applications such as audio amplifiers and high-frequency switching circuits. In these types of applications, the high gain and low noise performance makes it an ideal choice.

To conclude, the ZXT10N50DE6TC is a type of single bipolar junction transistor that is used in a variety of applications. Its main advantage is that it is capable of providing a higher gain and lower noise, making it ideal for audio amplifiers and other high-frequency switching applications. It is also capable of operating at high temperatures, making it suitable for use in high-temperature environments. Therefore, the ZXT10N50DE6TC is an excellent choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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