ZXT13N20DE6TC Allicdata Electronics
Allicdata Part #:

ZXT13N20DE6TC-ND

Manufacturer Part#:

ZXT13N20DE6TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 20V 4.5A SOT23-6
More Detail: Bipolar (BJT) Transistor NPN 20V 4.5A 96MHz 1.1W S...
DataSheet: ZXT13N20DE6TC datasheetZXT13N20DE6TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 45mA, 4.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.1W
Frequency - Transition: 96MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Base Part Number: ZXT13N20D
Description

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Transistors are important active components used in amplifiers, switches, regulated power supplies and other electronic devices. The ZXT13N20DE6TC is a popular single bipolar junction transistor (BJT) and is used in many applications. This article provides an overview of the ZXT13N20DE6TC including its application field, working principle and other details.

The ZXT13N20DE6TC is a NPN transistor with very small dimensions. It is mainly used in high current applications, with a low collector-emitter saturation voltage and high current gain, making it ideal for switching, amplification and other high current requirements. The transistor has an average operational current of up to 15 A, and a maximum voltage of up to 200 V. It has an operating temperature range from -40°C to +150°C and a storage temperature range from -55°C to +175°C.

The ZXT13N20DE6TC is used in a wide range of applications including audio amplifiers, switching circuits, motor control circuits and high speed switching applications. It is also commonly used in voltage amplifiers and low level signal amplifiers. In addition, the transistor is also used for power switching applications in automotive and other industrial applications.

The ZXT13N20DE6TC works on the principle of bipolar conductivity. In this type of conduction, two types of carriers are created in the semiconductor material — electrons and holes. By applying a bias voltage to the base P-N junction, the current of electrons and holes start flowing from the emitter to the collector. At the same time, the current passes through the transistor and causes the resistance levels of the transistor to vary.

When a voltage is applied to the emitter-base junction of a NPN transistor, the base-emitter voltage can go below the threshold voltage Vce and the current flows from emitter to collector. This current helps to reduce the resistance between collector and emitter. The voltage drop across collector-emitter depends on the current amplification factor of the transistor. A large current amplification factor will cause the Vce to be small. This makes the ZXT13N20DE6TC a good choice when the voltage amplification or the current amplification is desired.

The ZXT13N20DE6TC is a robust, reliable and widely used transistor. It is widely used in many applications due to its low collector-emitter saturation voltage, high current gain and excellent reliability. The transistor is compatible with many circuit designs and is widely used for switching, amplification and other high current requirements in automotive, industrial and other engineering applications.

The specific data is subject to PDF, and the above content is for reference

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