ZXT13N15DE6TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 5A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 2V
Power - Max:	1.1W
Frequency - Transition:	72MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	SOT-23-6
Base Part Number:	ZXT13N15D

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ZXT13N15DE6TC Application Field and Working PrincipleSince its introduction in 1947, the bipolar junction transistor (BJT) has become one of the most versatile and widely used electronic devices. It is a three-terminal semiconductor device that can be used to either amplify a signal or switch it on and off. The ZXT13N15DE6TC is a type of BJT that is increasingly being used in various applications. This article looks at the potential applications of the ZXT13N15DE6TC and its working principle.The ZXT13N15DE6TC is a high-voltage, low-power NPN transistor. It is the second generation of BJTs and it offers higher current gains, faster switching speed, and better noise performance than its predecessor. It is designed for use in low-frequency applications such as in relay drivers, automotive switching, and motor speed control. It is also suitable for switching applications such as power switches, solenoids, and contactors. It also finds use in audio amplifiers and power control circuits.The ZXT13N15DE6TC is a discrete component that consists of three terminals: the emitter, base, and collector. These three terminals form a circuit element known as a "transistor cell". The current flowing through the ZXT13N15DE6TC is determined by the ratio of the voltage applied across the base and emitter terminals. The voltage difference between these two terminals is known as the "transistor junction voltage". This junction voltage changes slowly with temperature and is used to control the current flow through the transistor.In operation, the two main currents that flow through the BJT are the collector current, which moves from the collector to the emitter, and the base current, which moves from the emitter to the base. In normal operation, the collector current is several times greater than the base current. The current gain, or hFE, of the ZXT13N15DE6TC is directly proportional to this ratio. The transistor is said to be "in" when the base current is greater than the collector current, and it is said to be "off" when the collector current is larger than the base current.The ZXT13N15DE6TC is designed to have a low saturation voltage, meaning that it is capable of handling higher voltage and power levels, and it is able to switch on and off more quickly than previous generations of BJTs. The device has high current gain, transient response time, and higher speed than its predecessors, making it well-suited to many applications.In summary, the ZXT13N15DE6TC is a high-voltage, low-power NPN transistor that is most commonly used in low-frequency applications such as relay drivers and automotive switches. Its three terminals form a circuit element known as a transistor cell, and the current flowing through the transistor is determined by the ratio of the base and emitter voltages. The device has high current gain, transient response time, and higher speed than its predecessors, making it well-suited to many applications.

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