Allicdata Part #: | ZXTP2012ZQTA-ND |
Manufacturer Part#: |
ZXTP2012ZQTA |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 4.3A SOT89 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | ZXTP2012ZQTA Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.28690 |
Series: | * |
Part Status: | Active |
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The ZXTP2012ZQTA is a single bipolar transistor, a three-terminal semiconductor device that exists in both PNP and NPN configurations. It is a family of transistors used mainly in power related applications, such as switching and amplification. It is designed to be used in a variety of applications, including audio amplifiers, power switches, relay drivers, motor drivers, and digital logic interfaces. The ZXTP2012ZQTA is especially suited for high current applications, such as motor control and power supply design.
The flow of current in a bipolar transistor is controlled by the base. With the base stimulated by a small current, the transistor acts as a switch, allowing a relatively large current to flow between the collector and the emitter. It can be said that the base voltage of one side or the other of the transistor is what allows current to enter or exit the base-emitter junction. This is the way a bipolar transistor amplifies the signal.
The ZXTP2012ZQTA is designed to perform at high speed and relatively high power while maintaining a high degree of efficiency. This makes it the ideal choice for a variety of applications, such as audio amplifiers, power switches, relay drivers, motor drivers, and digital logic interfaces. It is capable of operating at up to a maximum voltage of 60 volts, with a current carrying capacity of up to 20 amps.
The ZXTP2012ZQTA is designed with a built-in reverse bias protection diode, which prevents damage to the transistor in the event of a negative power supply voltage spike. This integral protection diode helps to protect the circuit from the consequences of faults in the system. It also helps to protect the transistor from thermal runaway, which can cause the transistor to permanently fail and become unusable.
The ZXTP2012ZQTA has a very low base resistance, which helps to maximize signal transfer. This also helps to minimize ringing, which can distort the signal. Additionally, the transistor has a high current gain, which allows it to accurately amplify the signal. The high gain also ensures a low noise floor, which can reduce background interference.
The ZXTP2012ZQTA is also designed with a built-in temperature compensating mechanism, which helps to keep the transistor within its safe operating temperature range. This temperature compensating feature helps to prevent thermal runaway and damage to the circuit. Additionally, the transistor has a high frequency response and a wide frequency range, which can help to reduce distortion and improve signal fidelity.
The ZXTP2012ZQTA is designed as a single transistor with a standard TO-246 package. It is available in both PNP and NPN configurations, allowing for flexibility in use. The ZXTP2012ZQTA is a very reliable, high performance, and high efficiency transistor, and is ideal for a variety of power related applications.
The specific data is subject to PDF, and the above content is for reference
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