ZXTP19060CFFTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP19060CFFTR-ND |
Manufacturer Part#: |
ZXTP19060CFFTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 4A SOT23F-3 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 4A 180MHz 1.5W Su... |
DataSheet: | ZXTP19060CFFTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 270mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1.5W |
Frequency - Transition: | 180MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Base Part Number: | ZXTP19060C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZXTP19060CFFTA is a single high voltage p-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) from ON Semiconductor. It is specifically designed to provide protection against overvoltage transients with high dV/dt immunity, high gate surge capability, and low gate charge. This device has a unique structure that is especially suitable for active snubber circuits and grid clamping applications. It also provides higher efficiency, lower power loss and more reliable performance than traditional devices.
This MOSFET is extremely versatile and can be used in a variety of applications, including power switching, motor control, overvoltage and overcurrent protection, and voltage regulation. It is also suitable for industrial, commercial, and automotive applications. The drain-source breakdown voltage of this device is rated up to 200 volts, and its maximum drain current is up to 60 amperes. It has an operating junction temperature range of -55 to +150 degrees Celsius. All of these features make the ZXTP19060CFFTA suitable for use in high-reliability, high-power applications.
The working principle of this MOSFET is similar to that of a traditional BJT (Bipolar Junction Transistor). A gate voltage is applied to the device, which in turn controls the current flow through the source-drain path. As with a BJT, the voltage on the gate controls the conductivity of the channel, and thus the current that can flow through it. What sets the MOSFET apart is that it inherently uses high input impedance and low output impedance, meaning higher efficiency and less power loss.
The ZXTP19060CFFTA is an excellent choice for applications where both high-power and high-reliability are needed. Its high-voltage, large-current capabilities make it suitable for a wide variety of applications in both industrial and automotive settings. In addition, its high-speed switching capabilities, low input and output impedances, and low heat dissipation make it an attractive choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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