ZXTP5401ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP5401ZTR-ND |
Manufacturer Part#: |
ZXTP5401ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 150V 0.6A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 1.2... |
DataSheet: | ZXTP5401ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTP5401 |
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The ZXTP5401ZTA is a single-stage bipolar transistor that is used in a variety of applications including power electronics and audio amplification. This bipolar junction transistor (BJT) is ideal for high-frequency applications because it offers excellent switching characteristics and high gain. The ZXTP5401ZTA has a wide range of potential uses, including radiofrequency amplifiers, switching circuits, voltage regulators, high-voltage oscillators, and digital-to-analog converters.
The ZXTP5401ZTA is a NPN type bipolar transistor, meaning that it has two p-type and one n-type, PNP type bipolar transistor. The device has an operating temperature range of -65 to +150 °C and a wide maximum dissipation power of 600mW. It has a relatively high collector-emitter breakdown voltage of 40V and a low saturation voltage from 0.45 to 0.6V, depending on the current. It has good gain-bandwidth characteristics and a high-frequency response of 0.7MHz.
The ZXTP5401ZTA is composed of three junctions or terminals, which are the emitter (E), base (B), and collector (C). The current flow to be amplified enters the BC junction, with the emitter as a controlling terminal. The current gain, or hFE, is determined by the voltage applied to the base terminal. As the voltage is increased, the collector current increases, resulting in a higher gain.
The ZXTP5401ZTA works in two modes depending on the base bias. When the base is forward biased, the transistor is in the active region, and a DC voltage can be applied to the base to control the base-emitter junction. When the base is reverse biased, the transistor is in the saturation region, and the collector current is established by the amount of base current present. In this mode, the current gain of the transistor is determined by the available base current.
The ZXTP5401ZTA is used in a variety of applications, including radiofrequency amplifiers, switching circuits, voltage regulators, oscillators, and digital-to-analog converters (DACs). It is well-suited for these applications due to its high current gain and high-frequency response. This makes it an ideal choice for noise reduction in audio amplifiers, as well as for voltage-regulated supplies and multi-stage amplifiers. It is also suitable for high-frequency switching, as it has a wide maximum dissipation power and a low saturation voltage.
The ZXTP5401ZTA is a versatile and reliable single-stage bipolar transistor. It is ideal for high-frequency applications, thanks to its excellent switching characteristics, wide maximum dissipation power, and low saturation voltage. It is also suitable for a variety of applications, including radiofrequency amplifiers, switching circuits, voltage regulators, high-voltage oscillators, and digital-to-analog converters. By leveraging its versatile features and wide range of potential uses, this device can be a powerful asset in any power electronics or audio amplifier project.
The specific data is subject to PDF, and the above content is for reference
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