ZXTP05120HFFTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP05120HFFTR-ND |
Manufacturer Part#: |
ZXTP05120HFFTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP DARL 120V 1A SOT23F-3 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 120V 1A ... |
DataSheet: | ZXTP05120HFFTA Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 2mA, 2A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 3000 @ 1A, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Base Part Number: | ZXTP05120H |
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Bipolar Junction Transistors, or BJTs, are a type of transistor that uses an electron hole injection mechanism to control the current flow in one direction. The ZXTP05120HFFTA is a type of Single Bipolar Junction Transistor (BJT) designed to meet demanding and specialized applications. This article will discuss the application field and working principle of the ZXTP05120HFFTA Single BJT.
Bipolar junction transistors are often used as amplifiers, switches, and level shifters. As a switching device, BJTs can be used to control the current between two terminals. They are most commonly used as amplifiers in applications such as voltage gain and power gain. As a level shifter, BJTs can be used to convert voltages from one level to another, which is a useful feature in certain types of circuits. BJTs are also often used in relays and other power controllers, or for switching between multiple power sources.
The ZXTP05120HFFTA is designed specifically for operation in temperature extremes, making it suitable for both high-temperature applications and for industrial control operations. It is a standard-sized single BJT with a 0.22x0.22 inch package, and features a geometry constructed of highly efficient metal-oxide-semiconductor construction that ensures reliable performance in extreme environments. This BJT is capable of handling up to 400V and between about 10 and 500mA, and is capable of operating at temperatures ranging from -55°C to +150°C.
The ZXTP05120HFFTA Single BJT’s working principle depends on how it is used. When used as a switch, it is operated by injecting holes and electrons into the P-type semiconductor to form a current flow between the base and collector terminals. When used as an amplifier, it operates in the common emitter configuration, where the voltage of the input signal is amplified by applying a small amount of current to the base. In level shifting, the BJT is configured in the common collector mode, where the input signal is used to modulate the current in the collector, producing a voltage output at the base. In all applications, the BJT is governed by the basic BJT operating equations, ensuring its consistent and reliable performance.
In conclusion, the ZXTP05120HFFTA Single Bipolar Junction Transistor is a highly efficient BJT designed specifically for operation in temperature extremes. It is a standard-sized BJT with a 0.22x0.22 inch package and is capable of handling up to 400V and between about 10 and 500mA. Its performance is regulated by the basic BJT operating equations, and its geometry is constructed of highly efficient metal-oxide-semiconductor construction. As a switching device, amplifier, or level shifter, the ZXTP05120HFFTA Single BJT is an excellent choice for specialized and demanding applications.
The specific data is subject to PDF, and the above content is for reference
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