ZXTP2014GTA Discrete Semiconductor Products

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The ZXTP2014GTA is a single-ended bipolar junction transistor in the TO-252AC package. It is a higher power NPN Bipolar Junction Transistor (BJT) primarily used in RF and microwave applications. The ZXTP2014GTA has a high collector-to-emitter breakdown voltage of 95 volts, along with a high current gain band of 20, making it ideal for transistor amplifiers, switches and high-frequency circuits.

The ZXTP2014GTA is engineered to offer excellent electrical characteristics such as low gate capacitance, low on-state resistance and high current gain. This makes the device well suited for RF power amplifiers and switching applications such as CDMA, GSM, EDGE, WCDMA, LTE, WLAN and Wi-Fi. It features high-frequency switching for high efficiency with low distortion.

The ZXTP2014GTA is designed to maximize performance by providing the greatest switching speeds and low on-state resistance. It offers higher GAIN cross over frequencies up to 700MHz. This transistor’s low input and high output impedance helps to minimize reflections and optimize performance in high frequency digital, analog and mixed signal designs.

The ZXTP2014GTA also offers an extremely useful feature—the collector-emitter breakdown voltage. This voltage is the voltage at which current can no longer be held in the energy storage capacitors at the base of the transistor. This ensures that the collector-emitter junction does not overheat and damages the transistor. The ZXTP2014GTA features a breakdown voltage of 95 volts, allowing for higher power levels than other similar transistors.

The ZXTP2014GTA is ideal for RF and microwave applications due to its high current gain band, low on-state resistance, low gate capacitance and high-frequency switching capabilities. These features allow the device to offer superior performance in high-frequency designs. The ZXTP2014GTA is an excellent choice for amplifier, switch and high-frequency circuits, as it is able to operate reliably over a wide range of temperatures.

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