ZXTP722MATA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2.5A
Voltage - Collector Emitter Breakdown (Max):	70V
Vce Saturation (Max) @ Ib, Ic:	260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 1.5A, 5V
Power - Max:	3W
Frequency - Transition:	180MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-UDFN
Supplier Device Package:	DFN2020B-3
Base Part Number:	ZXTP722

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Introduction: ZXTP722MATA is a type of transistor, classified under Bipolar Junction Transistor (BJT) – Single. It is a two-terminal electronic switching semiconductor device. This transistor is frequently used to switch high current, low voltage and low power supply levels. It also finds wide application in electrical and electronic systems to amplify, switch, and regulate the power supply. Application Field: The ZXTP722MATA finds primary application in automotive power control systems, power conversion and inverters, motor control and automation systems, industrial equipment and appliances, and distributed energy systems. It can be used as an electronic switch to control the high currents of a large magnitude and low voltage. Though the ZXTP722MATA is primarily used for switching applications, it can also be used in low-level amplifier applications. In these applications, this transistor is used as the input stage amplifier by providing a current gain. Working Principle: The working principle of the ZXTP722MATA is based on the basic principles of a bi-polar junction transistor. The transistor acts as a three-terminal device consisting of a base, a collector and an emitter. The base and collector of the transistor are brought in contact through a small doping region known as a base region. The emitter is connected to the ground. When a current is applied to the base of the transistor, it affects the current flowing through the collector. A small base current is amplified in terms of output current at the collector. This is known as current amplification or current gain, and it is measured in ‘hFE’. The higher the current gain, the better it is for switching applications. Further, this transistor also has two other major parameters for the proper functioning of the device, the ‘breakdown voltage’ (VCEO) and the ‘maximum current’ (IC). The device should be made to operate within these values to get the best performance from the device. Conclusion: The ZXTP722MATA is a powerful transistor that can be used in a variety of applications. Its wide application field and working principle make it an ideal choice for a variety of low-level amplification and high-powered switching applications. The device is designed to meet the needs of low-voltage, low-power, and high-current applications. It can operate within the parameters of the breakdown voltage and maximum current to ensure reliable performance.

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