ZXTP2012ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP2012ZTR-ND |
Manufacturer Part#: |
ZXTP2012ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 4.3A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 4.3A 120MHz 1.5W ... |
DataSheet: | ZXTP2012ZTA Datasheet/PDF |
Quantity: | 970 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4.3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 215mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 2A, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZXTP2012 |
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The ZXTP2012ZTA is a bipolar junction transistor (BJT) for a wide range of applications. It has a single-piece base-emitter structure and can be used for a variety of purposes, including high-frequency operation, high power switching, or as a driver device. It is rated at 60 Volts and 15 Amps and is suitable for various circuit topologies, such as bridge and synchronous rectifiers. As with most other BJTs, the ZXTP2012ZTA has three layers: emitter, base, and collector. The emitter is the main current carrying element, while the base and collector are the higher-potential elements. The ZXTP2012ZTA is most commonly used as a switching device, and can be used to control a variety of electronics, such as cell phones, camcorders, and other consumer electronics.
In order to understand how the ZXTP2012ZTA works, it is important to understand the basic operation of a BJT. A BJT is composed of two PN junctions, or "poles", connected back-to-back. Depending on the voltage applied to the base-emitter junction, current can either flow from the emitter to the collector or from the collector to the emitter. This current flow is controlled by the base-emitter junction, which uses a small amount of current to control the much larger current that passes through the collector-emitter junction. Because of this, a BJT is well suited for use as an amplifier or a switch.
The ZXTP2012ZTA is designed to be a general-purpose BJT, capable of a variety of applications. It has a single-piece base-emitter structure and has a maximum collector current rating of 15 Amps. It has an effective gain of 40 at 1 MHz and a current gain of 600. It has a very low collector-base capacitance (0.6pf) and is well-suited to high-frequency circuits. As a BJT, the ZXTP2012ZTA has a number of advantages over FETs, such as higher switching speeds and lower power consumption.
The ZXTP2012ZTA can be used for a variety of switching applications, including bridges, synchronous rectifiers, and H-bridges. It can also be used to switch loads in consumer electronics, such as mobile phones, laptops, and other consumer electronics. As a switching device, it has the advantage of being able to quickly switch between two high voltages, or quickly switch between two low voltages. It also has the advantage of being able to handle large currents without needing a large heat sink.
The ZXTP2012ZTA is an excellent choice for a wide range of applications, from those that require a high-frequency BJT to those that require a fast switching device. Its low capacitance and high current rating make it an ideal choice for switching applications, while its low power consumption makes it a good choice for consumer electronics. Its rugged construction and single-piece base-emitter structure make it a reliable solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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