ZXTP2041FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXTP2041FTR-ND |
Manufacturer Part#: |
ZXTP2041FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 40V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 1A 150MHz 350mW S... |
DataSheet: | ZXTP2041FTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 100mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | ZXTP2041 |
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Transistors - Bipolar (BJT) - Single are, in essence, a type of electronic device that is used to amplify or switch electronic signals. The ZXTP2041FTA is an example of a BJT device intended for general purpose use.
The ZXTP2041FTA is a NPN semiconductor device, with a 300V Pulsed Transistor Assemblies capable of continuous recording of up to 10A peak collector current, and can support both standard and high power applications. The transistor is encapsulated in a hermetically sealed metal package which provides the device with additional protection from exterior environmental conditions.
This device is popular for use in many different applications, such as motor control, industrial sensors, solid state relays, and audio power amplifiers. The ZXTP2041FTA is also used in power supplies, telecommunication devices, integrated circuits, and automotive applications.
The basic principle of operation for the ZXTP2041FTA is the same as that of all other BJT devices. It consists of three different parts: the emitter, the collector, and the base. An electric current, often referred to as the base current, is applied to the base of the device. This current is amplified and the amplified current is then transferred to the collector. In most applications, the internal resistance of the device is adjusted by the external circuit in order to control the current flow between the collector and emitter.
The ZXTP2041FTA is designed to have a very high power dissipation capacity and a high frequency response. This makes the device ideal for applications that require fast switching capabilities or high power outputs. It has a low power dissipation rate and is suitable for high current applications.
The ZXTP2041FTA is also designed to be very stable and reliable, making it suitable for use in harsh environments and other applications that require a long operating lifespan. The device has a high junction-to-case thermal resistance and low reverse leakage current, making it suitable for use in high-power circuits.
In summary, the ZXTP2041FTA is a type of NPN transistor intended for general purpose applications. It has a 300V Pulsed Transistor Assemblies, which is capable of recording up to 10A peak collector current, and can support both standard and high power applications. The basic operation principle is the same as that of all other BJT devices, and the device is designed to be highly stable and reliable, suitable for use in harsh environments or high power circuits.
The specific data is subject to PDF, and the above content is for reference
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