85c - 20,000f6.3v 42w x 62l - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
M25P10-AVMN3P/X -ND	M25P10-AVMN3P/X	Micron Technology Inc.	View more Packaging: Tube Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Clock Frequency: 50MHz Write Cycle Time - Word, Page: 15ms, 5ms Memory Interface: SPI Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: M25P10	1000 Order	1+: $0
M25P40-VMN3TP/X CT-ND	M25P40-VMN3TP/X TR	Micron Technology Inc.	View more Packaging: Cut Tape (CT) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Clock Frequency: 25MHz Write Cycle Time - Word, Page: 15ms, 5ms Memory Interface: SPI Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: M25P40	1000 Order	1+: $0
M25P10-AVMN3TP/ XCT-ND	M25P10-AVMN3TP/ X TR	Micron Technology Inc.	View more Packaging: Cut Tape (CT) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Clock Frequency: 50MHz Write Cycle Time - Word, Page: 15ms, 5ms Memory Interface: SPI Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: M25P10	1000 Order	1+: $0
585-1148-2-ND	MD8832-D1G-V18- X-P	SanDisk	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 30ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 69-FBGA Supplier Device Package: 69-FBGA (9x12)	1000 Order	--
S29GL512N11FFI0 23-ND	S29GL512N11FFI0 23	Cypress Semiconductor Corp	View more Series: GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1600+: $4.9637
RMLV0816BGSA-4S 2#AA0-ND	RMLV0816BGSA-4S 2#AA0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $5.9913 10+: $5.5465 25+: $5.421 50+: $5.3913 100+: $4.7463 250+: $4.5114 500+: $4.4651 1000+: $4.3163
S29GL128N11TFA0 20-ND	S29GL128N11TFA0 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $6.4952
JS28F00AM29EBHB TR-ND	JS28F00AM29EBHB TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
S29GL032N11FFI0 20-ND	S29GL032N11FFI0 20	Cypress Semiconductor Corp	View more Series: GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	180+: $0.94
RMLV0816BGSD-4S 2#AC0-ND	RMLV0816BGSD-4S 2#AC0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $5.9913 10+: $5.5465 25+: $5.421 50+: $5.3913 100+: $4.7463 250+: $4.5114 500+: $4.4651 1000+: $4.3163
RC28F640J3F75BT R-ND	RC28F640J3F75B TR	Micron Technology Inc.	View more Series: StrataFlash Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 75ns Access Time: 75ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
S29AL016J55GTIR 27G-ND	S29AL016J55GTIR 27G	Cypress Semiconductor Corp	View more Series: AL-J Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
S29AS008J70BFI0 10-ND	S29AS008J70BFI0 10	Cypress Semiconductor Corp	View more Series: AS-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	338+: $0.5595
S29GL512N11FFA0 23-ND	S29GL512N11FFA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
RMLV1616AGSA-5S 2#KA0-ND	RMLV1616AGSA-5S 2#KA0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $5.1795
S29AL008J70BFA0 10-ND	S29AL008J70BFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, AL-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	338+: $0.9737
CY62167GN-45ZXI -ND	CY62167GN-45ZXI	Cypress Semiconductor Corp	View more Series: MoBL Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	96+: $6.4695
S29GL064S70BHA0 43-ND	S29GL064S70BHA0 43	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2500+: $2.104
S29GL256N11TFA0 23-ND	S29GL256N11TFA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $7.0695
S29AL008J70TFA0 23-ND	S29AL008J70TFA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, AL-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $0.8263
PN28F256M29EWHD -ND	PN28F256M29EWHD	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 100ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
RMLV1616AGSA-5S 2#AA0-ND	RMLV1616AGSA-5S 2#AA0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $7.1883 10+: $6.656 25+: $6.5051 50+: $6.4695 100+: $5.6955 250+: $5.4137 500+: $5.3582 1000+: $5.1795
RMLV0816BGSA-4S 2#KA0-ND	RMLV0816BGSA-4S 2#KA0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $4.3163
RMLV1616AGSD-5S 2#HC0-ND	RMLV1616AGSD-5S 2#HC0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $5.1795
S29GL256N11FFA0 13-ND	S29GL256N11FFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1600+: $7.1511
S29GL064N90TFA0 10-ND	S29GL064N90TFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $3.1624
S29AS016J70BHI0 42-ND	S29AS016J70BHI0 42	Cypress Semiconductor Corp	View more Series: AS-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	800+: $1.1337
CY62167GN-45ZXI T-ND	CY62167GN-45ZXI T	Cypress Semiconductor Corp	View more Series: MoBL Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $5.1795
S29GL256N11FFA0 10-ND	S29GL256N11FFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	180+: $8.0146
JS28F512M29EBHB TR-ND	JS28F512M29EBHB TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
JS28F256M29EBHB TR-ND	JS28F256M29EBHB TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
S29GL128N90FFAR 22-ND	S29GL128N90FFAR 22	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
RMLV1616AGSD-5S 2#AC0-ND	RMLV1616AGSD-5S 2#AC0	Renesas Electronics America	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $7.1883 10+: $6.656 25+: $6.5051 50+: $6.4695 100+: $5.6955 250+: $5.4137 500+: $5.3582 1000+: $5.1795
S29AL008J70SFI0 10-ND	S29AL008J70SFI0 10	Cypress Semiconductor Corp	View more Series: AL-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	72+: $0.8467
BU99022NUX-3TRT R-ND	BU99022NUX-3TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Memory Interface: IC Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	4000 Order	4000+: $0.1752 8000+: $0.1713 12000+: $0.1683 28000+: $0.1643
S29GL128N11FFA0 23-ND	S29GL128N11FFA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
S29GL256N11TFA0 13-ND	S29GL256N11TFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $4.4209
S29GL256N90FFAR 22-ND	S29GL256N90FFAR 22	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	400+: $7.8637
S29GL256N90TFAR 10-ND	S29GL256N90TFAR 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $9.2149
S29AL016J55FFAR 20-ND	S29AL016J55FFAR 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, AL-J Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--

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