RMLV1616AGSD-5S2#HC0

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The RMLV1616AGSD-5S2#HC0 is a modern memory device that finds a variety of applications in the computing world. It is a high-density 32Gb DDR3 SDRAM module, with a maximum interleaving capacity of 16GB. It has two independent 8-bit DDR3 channels, allowing for a maximum data rate of 1600MHz. The device is based on the RLDR-3V3 architecture, providing a faster and more efficient access to stored data. This device has a maximum die power of 1.35 volts and an operating temperature range of 0-70°C.

The device uses the advanced 3rd Generation HyperTransfer (HT-3) feature to reduce power consumption and minimize latency. HT-3 leverages the burst access protocol to greatly reduce latency and, with the help of high-speed DDR3 data buses and faster internal memory operations, enables faster memory controller performance. The device is built to meet the JEDEC standards for DDR3, a double data rate type of synchronous dynamic random access memory.

The primary application and working of the RMLV1616AGSD-5S2#HC0 is as a high-speed memory device. It helps increase the speed of data retrieval, allowing the user to access large amounts of data quickly and efficiently. The device is well suited to applications that require high memory bandwidth such as video editing, gaming, virtualization, and high-performance computing. Additionally, the device can be used in a wide range of computing platforms, ranging from embedded systems to high-end workstations.

The RMLV1616AGSD-5S2#HC0 features four primary memory controllers. The memory controllers support up to 16GB of interleaving, allowing the user to access larger amounts of data simultaneously. The device also supports chip select mode, allowing for multiple concurrent read and write operations. Additionally, the device supports error checking and correction (ECC) for data integrity and improved error detection. The device also supports an on-die termination (ODT) feature which allows for improved signal to noise ratio, lower power consumption and improved thermal efficiency.

The device is built using advanced 0.35-micron technology that helps the device to achieve faster speeds and reduce power consumption. The device supports a maximum power consumption of 1.35 volts, allowing for higher performance and increased energy efficiency. The device is also extremely reliable, providing up to one million erase/write cycles. Overall, the device is one of the most efficient and reliable DDR3 memory solutions available.

In conclusion, the RMLV1616AGSD-5S2#HC0 is a powerful and efficient memory device that finds a variety of applications in the computing world. It is an advanced 0.35-micron memory device that is capable of reaching data rates of 1600MHz, supporting up to 16GB of interleaving and providing up to one million erase/write cycles. It is well suited for applications that require high memory bandwidth, such as gaming and high-performance computing. Additionally, with its robust error checking and correction features and low power consumption, the RMLV1616AGSD-5S2#HC0 is an ideal choice for a variety of applications.

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