JS28F00AM29EBHB TR Allicdata Electronics
Allicdata Part #:

JS28F00AM29EBHBTR-ND

Manufacturer Part#:

JS28F00AM29EBHB TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par...
DataSheet: JS28F00AM29EBHB TR datasheetJS28F00AM29EBHB TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JS28F00AM29EBHB TR is a flash-based memory device used in a variety of application fields. It is suitable for both embedded systems and mobile applications. It has a flexible architecture, high-density storage capability, and fast data access rates.

The JS28F00AM29EBHB TR comes in a variety of configurations to suit different applications. It has a wide range of programmable options and can be used for general-purpose communications, embedded applications, and specific multimedia applications. The device is designed to provide high speed, low power operation, and reliability in demanding applications.

Features and Specifications

The JS28F00AM29EBHB TR has a wide range of features and specifications. It is capable of operating up to 2.5 volts, with a maximum operating temperature range of -40°C to +85°C. The device also features a power saving mode and a security lock feature with software protection. It is available in a variety of storage options, ranging from 28-kilobyte blocks to 64-megabyte blocks.

The device is capable of data transmission at speeds up to two times faster than the fastest commercially available flash memory chip. Additionally, the JS28F00AM29EBHB TR supports multiple I/O and timing modes, is error-corrected, and has read and write modes that allow for more efficient use of data.

Working Principle

The JS28F00AM29EBHB TR works according to the principles of static random access memory (SRAM) technology. This allows it to have faster Data access rates and low power consumption. SRAM is based on a technology that stores data in a grid or array of cells with multiple levels of bit-functionality.

Data can be accessed quickly by using a combination of logic gates and data transfer registers. The logic gates read and write commands to the cells, and the data transfer registers transfer the data from the cells to the processors. When data is written to the cell, an electrically programmed latch is used to store the data. The data is then read from the cell and transferred to the processor.

The JS28F00AM29EBHB TR supports a number of different I/O protocols, including asynchronous and synchronous modes. These protocols are designed to give users the flexibility to choose the most appropriate means of communication for their application. Additionally, the device supports multiple busses, such as I2C and Serial, allowing for a wide variety of different communication options.

Applications

The JS28F00AM29EBHB TR is used in a variety of applications, including embedded systems, mobile applications, and automotive designs. It is particularly well-suited for embedded designs that require low power operation, fast data access rates, and a wide array of I/O protocols. Additionally, the device is often used for multimedia applications, such as music and video streaming, due to its high speed and low power capabilities.

The JS28F00AM29EBHB TR is also widely used in automotive applications, such as electronic control units (ECUs). It is often used in vehicle systems that require rapid data retrieval and secure communication, such as engine control units and other automotive subsystems.

In conclusion, the JS28F00AM29EBHB TR is a versatile, high performance, and reliable flash memory device that can be used in a wide range of application fields. With its wide variety of features, low power consumption, and reliable performance, the device is an ideal choice for embedded, mobile, and automotive designs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JS28" Included word is 40
Part Number Manufacturer Price Quantity Description
JS28F640J3D75A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75A Micron Techn... -- 1000 IC FLASH 32M PARALLEL 56T...
JS28F128J3D75A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F640J3D75E Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75E Micron Techn... -- 1000 IC FLASH 32M PARALLEL 56T...
JS28F256P33T95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33B95A Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F128P33B85A Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F128P33T85A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F640P33B85A Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F640P33T85A Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F256J3D95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F640J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 32M PARALLEL 56T...
JS28F128J3D75B TR Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F640J3D75D TR Micron Techn... 0.0 $ 1000 IC FLASH 64M PARALLEL 56T...
JS28F320J3D75D TR Micron Techn... 0.0 $ 1000 IC FLASH 32M PARALLEL 56T...
JS28F256P30B95B TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256J3D95B TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256M29EWLA Micron Techn... -- 35 IC FLASH 256M PARALLEL 56...
JS28F256P30TFA Micron Techn... 24.62 $ 600 IC FLASH 256M PARALLEL 56...
JS28F256P30BFA Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33TFA Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256P33BFA Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F256M29EWHA Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F00AM29EWH0 Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 56TS...
JS28F00AM29EWL0 Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 56TS...
JS28F640P30B85A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F640P30T85A Micron Techn... -- 1000 IC FLASH 64M PARALLEL 56T...
JS28F128P30B85A Micron Techn... -- 1000 IC FLASH 128M PARALLEL 56...
JS28F128P30T85A Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 56...
JS28F256P30B95A Micron Techn... -- 1000 IC FLASH 256M PARALLEL 56...
JS28F256P30T95A Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F160B3TD70A Micron Techn... 0.0 $ 1000 IC FLASH 16M PARALLEL 48T...
JS28F160C3BD70A Micron Techn... -- 1000 IC FLASH 16M PARALLEL 48T...
JS28F160C3TD70A Micron Techn... 0.0 $ 1000 IC FLASH 16M PARALLEL 48T...
JS28F320C3BD70A Micron Techn... -- 1000 IC FLASH 32M PARALLEL 48T...
JS28F320C3TD70 Micron Techn... -- 1000 IC FLASH 32M PARALLEL 48T...
JS28F256J3F1058 TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 56...
JS28F00AM29EBHB TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLELFLASH...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics