Allicdata Part #: | JS28F00AM29EBHBTR-ND |
Manufacturer Part#: |
JS28F00AM29EBHB TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par... |
DataSheet: | JS28F00AM29EBHB TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8, 64M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JS28F00AM29EBHB TR is a flash-based memory device used in a variety of application fields. It is suitable for both embedded systems and mobile applications. It has a flexible architecture, high-density storage capability, and fast data access rates.
The JS28F00AM29EBHB TR comes in a variety of configurations to suit different applications. It has a wide range of programmable options and can be used for general-purpose communications, embedded applications, and specific multimedia applications. The device is designed to provide high speed, low power operation, and reliability in demanding applications.
Features and Specifications
The JS28F00AM29EBHB TR has a wide range of features and specifications. It is capable of operating up to 2.5 volts, with a maximum operating temperature range of -40°C to +85°C. The device also features a power saving mode and a security lock feature with software protection. It is available in a variety of storage options, ranging from 28-kilobyte blocks to 64-megabyte blocks.
The device is capable of data transmission at speeds up to two times faster than the fastest commercially available flash memory chip. Additionally, the JS28F00AM29EBHB TR supports multiple I/O and timing modes, is error-corrected, and has read and write modes that allow for more efficient use of data.
Working Principle
The JS28F00AM29EBHB TR works according to the principles of static random access memory (SRAM) technology. This allows it to have faster Data access rates and low power consumption. SRAM is based on a technology that stores data in a grid or array of cells with multiple levels of bit-functionality.
Data can be accessed quickly by using a combination of logic gates and data transfer registers. The logic gates read and write commands to the cells, and the data transfer registers transfer the data from the cells to the processors. When data is written to the cell, an electrically programmed latch is used to store the data. The data is then read from the cell and transferred to the processor.
The JS28F00AM29EBHB TR supports a number of different I/O protocols, including asynchronous and synchronous modes. These protocols are designed to give users the flexibility to choose the most appropriate means of communication for their application. Additionally, the device supports multiple busses, such as I2C and Serial, allowing for a wide variety of different communication options.
Applications
The JS28F00AM29EBHB TR is used in a variety of applications, including embedded systems, mobile applications, and automotive designs. It is particularly well-suited for embedded designs that require low power operation, fast data access rates, and a wide array of I/O protocols. Additionally, the device is often used for multimedia applications, such as music and video streaming, due to its high speed and low power capabilities.
The JS28F00AM29EBHB TR is also widely used in automotive applications, such as electronic control units (ECUs). It is often used in vehicle systems that require rapid data retrieval and secure communication, such as engine control units and other automotive subsystems.
In conclusion, the JS28F00AM29EBHB TR is a versatile, high performance, and reliable flash memory device that can be used in a wide range of application fields. With its wide variety of features, low power consumption, and reliable performance, the device is an ideal choice for embedded, mobile, and automotive designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JS28F640J3D75A | Micron Techn... | -- | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F320J3D75A | Micron Techn... | -- | 1000 | IC FLASH 32M PARALLEL 56T... |
JS28F128J3D75A | Micron Techn... | -- | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F640J3D75E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F320J3D75E | Micron Techn... | -- | 1000 | IC FLASH 32M PARALLEL 56T... |
JS28F256P33T95A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256P33B95A | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F128P33B85A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F128P33T85A | Micron Techn... | -- | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F640P33B85A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F640P33T85A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F256J3D95A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F640J3D75B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F320J3D75B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 56T... |
JS28F128J3D75B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F640J3D75D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F320J3D75D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 56T... |
JS28F256P30B95B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256J3D95B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256M29EWLA | Micron Techn... | -- | 35 | IC FLASH 256M PARALLEL 56... |
JS28F256P30TFA | Micron Techn... | 24.62 $ | 600 | IC FLASH 256M PARALLEL 56... |
JS28F256P30BFA | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256P33TFA | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256P33BFA | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256M29EWHA | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F00AM29EWH0 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 56TS... |
JS28F00AM29EWL0 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 56TS... |
JS28F640P30B85A | Micron Techn... | -- | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F640P30T85A | Micron Techn... | -- | 1000 | IC FLASH 64M PARALLEL 56T... |
JS28F128P30B85A | Micron Techn... | -- | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F128P30T85A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
JS28F256P30B95A | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F256P30T95A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F160B3TD70A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
JS28F160C3BD70A | Micron Techn... | -- | 1000 | IC FLASH 16M PARALLEL 48T... |
JS28F160C3TD70A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
JS28F320C3BD70A | Micron Techn... | -- | 1000 | IC FLASH 32M PARALLEL 48T... |
JS28F320C3TD70 | Micron Techn... | -- | 1000 | IC FLASH 32M PARALLEL 48T... |
JS28F256J3F1058 TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 56... |
JS28F00AM29EBHB TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLELFLASH... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...