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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
IPA65R190CFDXKSA1 IPA65R190CFDXKS
A1-ND		 IPA65R190CFDXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 17.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
 Vgs(th) (Max) @ Id: 4.5V @ 730A
 Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
300
Order

1+:

$2.2491

10+:

$2.0103

100+:

$1.6485

500+:

$1.3348

1000+:

$1.1258

 IPA65R190CFDXKSA1-ND Datasheet
IRLIZ24GPBF IRLIZ24GPBF-ND IRLIZ24GPBF Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 14A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
 Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
 Vgs (Max): 10V
 Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
 Power Dissipation (Max): 37W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

--

 IRLIZ24GPBF-ND Datasheet
IPAN70R900P7SXKSA1 IPAN70R900P7SXK
SA1-ND		 IPAN70R900P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 60A
 Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
 Power Dissipation (Max): 17.9W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
465
Order

1+:

$0.7245

10+:

$0.6325

100+:

$0.4879

500+:

$0.3614

1000+:

$0.2891

 IPAN70R900P7SXKSA1-ND Datasheet
IPAW60R600P7SXKSA1 IPAW60R600P7SXK
SA1-ND		 IPAW60R600P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V
 Vgs(th) (Max) @ Id: 4V @ 80A
 Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
 Power Dissipation (Max): 21W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
259
Order

1+:

$0.7245

10+:

$0.6426

450+:

$0.4458

900+:

$0.3442

1350+:

$0.311

 IPAW60R600P7SXKSA1-ND Datasheet
IPA50R950CEXKSA2 IPA50R950CEXKSA
2-ND		 IPA50R950CEXKSA
2		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 3.7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 13V
 Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
 Vgs(th) (Max) @ Id: 3.5V @ 100A
 Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
 Power Dissipation (Max): 25.7W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
228
Order

1+:

$0.6111

10+:

$0.5368

100+:

$0.4141

500+:

$0.3068

1000+:

$0.2454

 IPA50R950CEXKSA2-ND Datasheet
IPAW60R190CEXKSA1 IPAW60R190CEXKS
A1-ND		 IPAW60R190CEXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 26.7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 630A
 Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$1.4427

10+:

$1.3041

450+:

$0.9316

900+:

$0.7359

1350+:

$0.6754

 IPAW60R190CEXKSA1-ND Datasheet
SIHA30N60AEL-GE3 SIHA30N60AEL-GE
3TR-ND		 SIHA30N60AEL-GE
3		 Vishay Siliconix
View more  Series: EL
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 28A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 100V
 Power Dissipation (Max): 39W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1000+:

$2.2315

 SIHA30N60AEL-GE3TR-ND Datasheet
STF16N50M2 497-15114-5-ND STF16N50M2 STMicroelectronics
View more  Series: MDmesh
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 13A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
 Vgs (Max): 25V
 Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
 Power Dissipation (Max): 25W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
896
Order

1+:

$3.0429

50+:

$2.4452

100+:

$2.2279

500+:

$1.804

1000+:

$1.5215

 497-15114-5-ND Datasheet
IPA65R190C6XKSA1 IPA65R190C6XKSA
1-ND		 IPA65R190C6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 20.2A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 730A
 Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 IPA65R190C6XKSA1-ND Datasheet
IPAW60R180P7SXKSA1 IPAW60R180P7SXK
SA1-ND		 IPAW60R180P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 18A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V
 Vgs(th) (Max) @ Id: 4V @ 280A
 Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
 Power Dissipation (Max): 26W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$1.26

10+:

$1.1365

450+:

$0.8116

900+:

$0.6412

1350+:

$0.5884

 IPAW60R180P7SXKSA1-ND Datasheet
IPA65R1K0CEXKSA1 IPA65R1K0CEXKSA
1-ND		 IPA65R1K0CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 7.2A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 200A
 Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 68W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0.7245

10+:

$0.6439

100+:

$0.5087

500+:

$0.3945

1000+:

$0.3115

 IPA65R1K0CEXKSA1-ND Datasheet
IPAW60R280P7SXKSA1 IPAW60R280P7SXK
SA1-ND		 IPAW60R280P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 190A
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V
 Power Dissipation (Max): 24W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
331
Order

1+:

$1.071

10+:

$0.9507

450+:

$0.6594

900+:

$0.5091

1350+:

$0.46

 IPAW60R280P7SXKSA1-ND Datasheet
IPA65R280C6XKSA1 IPA65R280C6XKSA
1-ND		 IPA65R280C6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 13.8A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 440A
 Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$1.1058

 IPA65R280C6XKSA1-ND Datasheet
SIHF6N65E-GE3 SIHF6N65E-GE3-N
D		 SIHF6N65E-GE3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
 Power Dissipation (Max): 31W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
8
Order

--

 SIHF6N65E-GE3-ND Datasheet
SUA70060E-E3 SUA70060E-E3-ND SUA70060E-E3 Vishay Siliconix
View more  Series: ThunderFET
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 56.6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
 Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 30A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 50V
 Power Dissipation (Max): 39W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
675
Order

1+:

$1.2222

10+:

$1.0823

100+:

$0.8555

500+:

$0.6635

1000+:

$0.5238

 SUA70060E-E3-ND Datasheet
IPAN60R800CEXKSA1 IPAN60R800CEXKS
A1-ND		 IPAN60R800CEXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 8.4A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 800 mOhm @ 2A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 170A
 Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 27W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
445
Order

1+:

$0.693

10+:

$0.6124

100+:

$0.4839

500+:

$0.3753

1000+:

$0.2963

 IPAN60R800CEXKSA1-ND Datasheet
IRFI7536GPBF IRFI7536GPBF-ND IRFI7536GPBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 86A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 75A, 10V
 Vgs(th) (Max) @ Id: 4V @ 150A
 Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 48V
 Power Dissipation (Max): 75W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

2000+:

$1.3161

 IRFI7536GPBF-ND Datasheet
IPA80R1K0CEXKSA1 IPA80R1K0CEXKSA
1-ND		 IPA80R1K0CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 3.6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
 Vgs(th) (Max) @ Id: 3.9V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 IPA80R1K0CEXKSA1-ND Datasheet
SIHF35N60E-GE3 SIHF35N60E-GE3-
ND		 SIHF35N60E-GE3 Vishay Siliconix
View more  Series: E
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 32A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
 Power Dissipation (Max): 39W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
957
Order

1+:

$4.2588

10+:

$3.8039

100+:

$3.119

500+:

$2.5256

1000+:

$2.13

 SIHF35N60E-GE3-ND Datasheet
SIHF22N60E-GE3 SIHF22N60E-GE3-
ND		 SIHF22N60E-GE3 Vishay Siliconix
View more  Series: E
 Packaging: Cut Tape (CT)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 21A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
 Power Dissipation (Max): 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
288
Order

--

 SIHF22N60E-GE3-ND Datasheet
SIHA17N80E-E3 SIHA17N80E-E3-N
D		 SIHA17N80E-E3 Vishay Siliconix
View more  Series: E
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2408pF @ 100V
 Power Dissipation (Max): 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
44
Order

1+:

$3.5406

10+:

$3.1626

100+:

$2.5932

500+:

$2.0999

1000+:

$1.771

 SIHA17N80E-E3-ND Datasheet
IPAN70R600P7SXKSA1 IPAN70R600P7SXK
SA1-ND		 IPAN70R600P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 8.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 90A
 Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V
 Power Dissipation (Max): 24.9W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.3875

 IPAN70R600P7SXKSA1-ND Datasheet
IPA65R310CFDXKSA1 IPA65R310CFDXKS
A1-ND		 IPA65R310CFDXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 11.4A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V
 Vgs(th) (Max) @ Id: 4.5V @ 440A
 Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$1.0158

 IPA65R310CFDXKSA1-ND Datasheet
IPA80R900P7XKSA1 IPA80R900P7XKSA
1-ND		 IPA80R900P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 110A
 Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
 Power Dissipation (Max): 26W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
153
Order

1+:

$1.1214

10+:

$0.9916

100+:

$0.7838

500+:

$0.6079

1000+:

$0.4799

 IPA80R900P7XKSA1-ND Datasheet
SIHA14N60E-E3 SIHA14N60E-E3-N
D		 SIHA14N60E-E3 Vishay Siliconix
View more  Series: E
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 13A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V
 Power Dissipation (Max): 147W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
957
Order

1+:

$1.7199

10+:

$1.5542

100+:

$1.2487

500+:

$0.9712

1000+:

$0.8047

 SIHA14N60E-E3-ND Datasheet
IPA60R280P7XKSA1 IPA60R280P7XKSA
1-ND		 IPA60R280P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 190A
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V
 Power Dissipation (Max): 24W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
479
Order

1+:

$1.5057

10+:

$1.3627

100+:

$1.0951

500+:

$0.8518

1000+:

$0.7057

 IPA60R280P7XKSA1-ND Datasheet
IPA80R460CEXKSA1 IPA80R460CEXKSA
1-ND		 IPA80R460CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V
 Vgs(th) (Max) @ Id: 3.9V @ 680A
 Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 IPA80R460CEXKSA1-ND Datasheet
IPA95R1K2P7XKSA1 IPA95R1K2P7XKSA
1-ND		 IPA95R1K2P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 950V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.7A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 140A
 Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V
 Power Dissipation (Max): 27W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
500
Order

1+:

$1.2033

10+:

$1.0679

100+:

$0.844

500+:

$0.6545

1000+:

$0.5168

 IPA95R1K2P7XKSA1-ND Datasheet
IPAN60R650CEXKSA1 IPAN60R650CEXKS
A1-ND		 IPAN60R650CEXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 9.9A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 200A
 Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 28W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
953
Order

1+:

$0.7749

10+:

$0.6854

100+:

$0.5419

500+:

$0.4203

1000+:

$0.3318

 IPAN60R650CEXKSA1-ND Datasheet
SIHF15N65E-GE3 SIHF15N65E-GE3-
ND		 SIHF15N65E-GE3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

--

 SIHF15N65E-GE3-ND Datasheet
IPA60R280P7SXKSA1 IPA60R280P7SXKS
A1-ND		 IPA60R280P7SXKS
A1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 190A
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V
 Power Dissipation (Max): 24W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
184
Order

--

 IPA60R280P7SXKSA1-ND Datasheet
IPAN70R360P7SXKSA1 IPAN70R360P7SXK
SA1-ND		 IPAN70R360P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 12.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 150A
 Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V
 Power Dissipation (Max): 26.5W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.4918

 IPAN70R360P7SXKSA1-ND Datasheet
IPAN70R450P7SXKSA1 IPAN70R450P7SXK
SA1-ND		 IPAN70R450P7SXK
SA1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 10A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.3A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 120A
 Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V
 Power Dissipation (Max): 22.7W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
478
Order

1+:

$0.7938

10+:

$0.7018

100+:

$0.5547

500+:

$0.4302

1000+:

$0.3396

 IPAN70R450P7SXKSA1-ND Datasheet
IPA50R650CEXKSA2 IPA50R650CEXKSA
2-ND		 IPA50R650CEXKSA
2		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Last Time Buy
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 4.6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 13V
 Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V
 Vgs(th) (Max) @ Id: 3.5V @ 150A
 Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V
 Power Dissipation (Max): 27.2W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.3482

 IPA50R650CEXKSA2-ND Datasheet
AOTF190A60L 785-1789-ND AOTF190A60L Alpha & Omega Semiconductor Inc.
View more  Series: *
 Packaging: Tube
 Part Status: Active
 Mounting Type: Surface Mount
 Supplier Device Package: TO-220F
 Package / Case: TO-220-3 Full Pack
820
Order

--

 785-1789-ND Datasheet
2SJ438,Q(M 2SJ438Q(M-ND 2SJ438,Q(M Toshiba Semiconductor and Storage
View more  Series: *
 Packaging: Bulk
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-220NIS
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 2SJ438Q(M-ND Datasheet
2SJ438(CANO,A,Q) 2SJ438(CANOAQ)-
ND		 2SJ438(CANO,A,Q
)		 Toshiba Semiconductor and Storage
View more  Series: *
 Packaging: Bulk
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-220NIS
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 2SJ438(CANOAQ)-ND Datasheet
2SJ438,MDKQ(M 2SJ438MDKQ(M-ND 2SJ438,MDKQ(M Toshiba Semiconductor and Storage
View more  Series: *
 Packaging: Bulk
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-220NIS
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 2SJ438MDKQ(M-ND Datasheet
AOTF10T60_001 AOTF10T60_001-N
D		 AOTF10T60_001 Alpha & Omega Semiconductor Inc.
View more  Series: *
 Packaging: Tube
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-220F
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 AOTF10T60_001-ND Datasheet
2SJ438,MDKQ(J 2SJ438MDKQ(J-ND 2SJ438,MDKQ(J Toshiba Semiconductor and Storage
View more  Series: *
 Packaging: Bulk
 Part Status: Obsolete
 Mounting Type: Through Hole
 Supplier Device Package: TO-220NIS
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 2SJ438MDKQ(J-ND Datasheet
Hot Searches: c-pack with 3 cells,kw-1820, sho c-pack with 3 cells, kw-1120, sh resistor packs led wall pack thyristor power pack cap, 0.68f, 5.5v, kw series, sho edlc-p 25f-2.7v-1820- power edlc-e 20f-2.7v-1820- energy