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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
SIHA15N50E-E3 SIHA15N50E-E3-N
D		 SIHA15N50E-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 14.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V
 Power Dissipation (Max): 33W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
785
Order

1+:

$1.5939

10+:

$1.4402

100+:

$1.1574

500+:

$0.9002

1000+:

$0.7459

 SIHA15N50E-E3-ND Datasheet
IPA65R380C6XKSA1 IPA65R380C6XKSA
1-ND		 IPA65R380C6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 10.6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 320A
 Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
 Power Dissipation (Max): 31W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.8798

 IPA65R380C6XKSA1-ND Datasheet
STF5N105K5 497-15116-5-ND STF5N105K5 STMicroelectronics
View more  Series: MDmesh
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 1050V
 Current - Continuous Drain (Id) @ 25C: 3A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
 Vgs(th) (Max) @ Id: 5V @ 100A
 Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 100V
 Power Dissipation (Max): 25W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1066
Order

--

 497-15116-5-ND Datasheet
IPA60R600P7XKSA1 IPA60R600P7XKSA
1-ND		 IPA60R600P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V
 Vgs(th) (Max) @ Id: 4V @ 80A
 Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
 Power Dissipation (Max): 21W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
376
Order

1+:

$1.1277

10+:

$0.9986

100+:

$0.7893

500+:

$0.6121

1000+:

$0.4833

 IPA60R600P7XKSA1-ND Datasheet
SIHF18N50D-E3 SIHF18N50D-E3-N
D		 SIHF18N50D-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 18A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 9A, 10V
 Vgs(th) (Max) @ Id: 5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
 Power Dissipation (Max): 39W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
958
Order

--

 SIHF18N50D-E3-ND Datasheet
IPAN65R650CEXKSA1 IPAN65R650CEXKS
A1-ND		 IPAN65R650CEXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 10.1A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 210A
 Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 28W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0.819

10+:

$0.7245

100+:

$0.5724

500+:

$0.4439

1000+:

$0.3505

 IPAN65R650CEXKSA1-ND Datasheet
IPA60R120C7XKSA1 IPA60R120C7XKSA
1-ND		 IPA60R120C7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS C7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 11A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 390A
 Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$1.8679

 IPA60R120C7XKSA1-ND Datasheet
IPA65R1K5CEXKSA1 IPA65R1K5CEXKSA
1-ND		 IPA65R1K5CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 5.2A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 130A
 Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 30W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.36

 IPA65R1K5CEXKSA1-ND Datasheet
IPA60R280CFD7XKSA1 IPA60R280CFD7XK
SA1-ND		 IPA60R280CFD7XK
SA1		 Infineon Technologies
View more  Series: CoolMOS CFD7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.6A, 10V
 Vgs(th) (Max) @ Id: 4.5V @ 180A
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 807pF @ 400V
 Power Dissipation (Max): 24W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
431
Order

1+:

$1.6632

10+:

$1.5

100+:

$1.2055

500+:

$0.9376

1000+:

$0.7769

 IPA60R280CFD7XKSA1-ND Datasheet
IPAW60R280CEXKSA1 IPAW60R280CEXKS
A1-ND		 IPAW60R280CEXKS
A1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 19.3A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 430A
 Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
439
Order

1+:

$1.2285

10+:

$1.0893

450+:

$0.7556

900+:

$0.5834

1350+:

$0.5272

 IPAW60R280CEXKSA1-ND Datasheet
IPA70R360P7SXKSA1 IPA70R360P7SXKS
A1-ND		 IPA70R360P7SXKS
A1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 12.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 150A
 Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V
 Power Dissipation (Max): 26.4W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0.9072

10+:

$0.8026

100+:

$0.6342

500+:

$0.4918

1000+:

$0.3883

 IPA70R360P7SXKSA1-ND Datasheet
SIHA21N60EF-E3 SIHA21N60EF-E3-
ND		 SIHA21N60EF-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 21A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V
 Power Dissipation (Max): 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
981
Order

1+:

$2.9232

10+:

$2.6101

100+:

$2.1402

500+:

$1.733

1000+:

$1.4616

 SIHA21N60EF-E3-ND Datasheet
IPA80R360P7XKSA1 IPA80R360P7XKSA
1-ND		 IPA80R360P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 13A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 280A
 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
 Power Dissipation (Max): 30W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
469
Order

1+:

$1.8774

10+:

$1.6941

100+:

$1.3615

500+:

$1.0589

1000+:

$0.8774

 IPA80R360P7XKSA1-ND Datasheet
IPA60R180P7XKSA1 IPA60R180P7XKSA
1-ND		 IPA60R180P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 18A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V
 Vgs(th) (Max) @ Id: 4V @ 280A
 Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V
 Power Dissipation (Max): 26W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$1.8396

10+:

$1.6601

100+:

$1.3338

500+:

$1.0374

1000+:

$0.8595

 IPA60R180P7XKSA1-ND Datasheet
IPA70R900P7SXKSA1 IPA70R900P7SXKS
A1-ND		 IPA70R900P7SXKS
A1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 60A
 Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 400V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
 Power Dissipation (Max): 20.5W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
482
Order

1+:

$0.6363

10+:

$0.5626

100+:

$0.4445

500+:

$0.3447

1000+:

$0.2721

 IPA70R900P7SXKSA1-ND Datasheet
SIHA12N60E-E3 SIHA12N60E-E3-N
D		 SIHA12N60E-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
 Power Dissipation (Max): 33W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
10
Order

1+:

$1.8333

10+:

$1.6556

100+:

$1.3302

500+:

$1.0346

1000+:

$0.8572

 SIHA12N60E-E3-ND Datasheet
IPA60R1K0CEXKSA1 IPA60R1K0CEXKSA
1-ND		 IPA60R1K0CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 6.8A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 130A
 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 26W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.3475

 IPA60R1K0CEXKSA1-ND Datasheet
SIHF5N50D-E3 SIHF5N50D-E3-ND SIHF5N50D-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 5.3A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
 Vgs(th) (Max) @ Id: 5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V
 Power Dissipation (Max): 30W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
8
Order

1+:

$1.0017

10+:

$0.887

100+:

$0.7011

500+:

$0.5437

1000+:

$0.4293

 SIHF5N50D-E3-ND Datasheet
IPA60R060P7XKSA1 IPA60R060P7XKSA
1-ND		 IPA60R060P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
 Vgs(th) (Max) @ Id: 4V @ 800A
 Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V
 Power Dissipation (Max): 29W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
174
Order

--

 IPA60R060P7XKSA1-ND Datasheet
SUA70090E-E3 SUA70090E-E3-ND SUA70090E-E3 Vishay Siliconix
View more  Series: ThunderFET
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 42.8A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
 Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
 Power Dissipation (Max): 35.7W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
897
Order

1+:

$1.1718

10+:

$1.0597

100+:

$0.8518

500+:

$0.6625

1000+:

$0.5489

 SUA70090E-E3-ND Datasheet
IPA65R600C6XKSA1 IPA65R600C6XKSA
1-ND		 IPA65R600C6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 7.3A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 210A
 Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
 Power Dissipation (Max): 28W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 IPA65R600C6XKSA1-ND Datasheet
SIHA25N60EFL-E3 SIHA25N60EFL-E3
-ND		 SIHA25N60EFL-E3 Vishay Siliconix
View more  Series: E
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 25A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V
 Vgs(th) (Max) @ Id: 5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V
 Power Dissipation (Max): 39W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
2998
Order

1+:

$3.4461

10+:

$3.0794

100+:

$2.5249

500+:

$2.0445

1000+:

$1.7243

 SIHA25N60EFL-E3-ND Datasheet
SIHF12N65E-GE3 SIHF12N65E-GE3T
R-ND		 SIHF12N65E-GE3 Vishay Siliconix
View more  Packaging: Bulk
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V
 Power Dissipation (Max): 33W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1000+:

$0.8667

 SIHF12N65E-GE3TR-ND Datasheet
IPA65R099C6XKSA1 IPA65R099C6XKSA
1-ND		 IPA65R099C6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 38A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 99 mOhm @ 12.8A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
 Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V
 Power Dissipation (Max): 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$0

 IPA65R099C6XKSA1-ND Datasheet
IPA60R360P7SXKSA1 IPA60R360P7SXKS
A1-ND		 IPA60R360P7SXKS
A1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 9A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 360 mOhm @ 2.7A, 10V
 Vgs(th) (Max) @ Id: 4V @ 140A
 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
 Power Dissipation (Max): 22W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
785
Order

1+:

$0.8505

10+:

$0.7541

100+:

$0.596

500+:

$0.4622

1000+:

$0.3649

 IPA60R360P7SXKSA1-ND Datasheet
SIHF15N60E-E3 SIHF15N60E-E3-N
D		 SIHF15N60E-E3 Vishay Siliconix
View more  Series: E
 Packaging: Bulk
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
995
Order

--

 SIHF15N60E-E3-ND Datasheet
SIHF12N60E-E3 SIHF12N60E-E3-N
D		 SIHF12N60E-E3 Vishay Siliconix
View more  Packaging: Bulk
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
 Power Dissipation (Max): 33W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
228
Order

--

 SIHF12N60E-E3-ND Datasheet
IPA50R190CEXKSA2 IPA50R190CEXKSA
2-ND		 IPA50R190CEXKSA
2		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Not For New Designs
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 18.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 13V
 Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 13V
 Vgs(th) (Max) @ Id: 3.5V @ 510A
 Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V
 Power Dissipation (Max): 32W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$1.3482

10+:

$1.2159

100+:

$0.9773

500+:

$0.7601

1000+:

$0.6298

 IPA50R190CEXKSA2-ND Datasheet
SIHF7N60E-E3 SIHF7N60E-E3-ND SIHF7N60E-E3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
 Power Dissipation (Max): 31W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
205
Order

1+:

$1.7388

10+:

$1.57

100+:

$1.2617

500+:

$0.9813

1000+:

$0.8131

 SIHF7N60E-E3-ND Datasheet
SIHA15N65E-GE3 SIHA15N65E-GE3-
ND		 SIHA15N65E-GE3 Vishay Siliconix
View more  Series: E
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1+:

$2.3184

10+:

$2.0683

100+:

$1.6962

500+:

$1.3735

1000+:

$1.1583

 SIHA15N65E-GE3-ND Datasheet
IPA70R600P7SXKSA1 IPA70R600P7SXKS
A1-ND		 IPA70R600P7SXKS
A1		 Infineon Technologies
View more  Series: CoolMOS P7
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 700V
 Current - Continuous Drain (Id) @ 25C: 8.5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 90A
 Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V
 Power Dissipation (Max): 25W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
388
Order

1+:

$0.7119

10+:

$0.6325

100+:

$0.4997

500+:

$0.3875

1000+:

$0.3059

 IPA70R600P7SXKSA1-ND Datasheet
IPA65R650CEXKSA1 IPA65R650CEXKSA
1-ND		 IPA65R650CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS CE
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 210A
 Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
 Power Dissipation (Max): 28W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1494
Order

1+:

$0.819

10+:

$0.7245

100+:

$0.5724

500+:

$0.4439

1000+:

$0.3505

 IPA65R650CEXKSA1-ND Datasheet
IPA65R190E6XKSA1 IPA65R190E6XKSA
1-ND		 IPA65R190E6XKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 20.2A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 730A
 Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$1.3667

 IPA65R190E6XKSA1-ND Datasheet
SIHF16N50C-E3 SIHF16N50C-E3-N
D		 SIHF16N50C-E3 Vishay Siliconix
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 500V
 Current - Continuous Drain (Id) @ 25C: 16A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
 Power Dissipation (Max): 38W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1000+:

$2.3532

 SIHF16N50C-E3-ND Datasheet
IPA60R1K5CEXKSA1 IPA60R1K5CEXKSA
1-ND		 IPA60R1K5CEXKSA
1		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 5A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 90A
 Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
 FET Feature: Super Junction
 Power Dissipation (Max): 20W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$0.3001

 IPA60R1K5CEXKSA1-ND Datasheet
SIHA2N80E-GE3 SIHA2N80E-GE3TR
-ND		 SIHA2N80E-GE3 Vishay Siliconix
View more  Series: E
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 2.8A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 2.75 Ohm @ 1A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V
 Power Dissipation (Max): 29W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1000+:

$0.5431

 SIHA2N80E-GE3TR-ND Datasheet
IPA80R460CEXKSA2 IPA80R460CEXKSA
2-ND		 IPA80R460CEXKSA
2		 Infineon Technologies
View more  Series: CoolMOS
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 10.8A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V
 Vgs(th) (Max) @ Id: 3.9V @ 680A
 Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
 Power Dissipation (Max): 34W (Tc)
 Operating Temperature: -40C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

500+:

$1.0068

 IPA80R460CEXKSA2-ND Datasheet
SIHF22N65E-GE3 SIHF22N65E-GE3-
ND		 SIHF22N65E-GE3 Vishay Siliconix
View more  Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 22A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V
 Power Dissipation (Max): 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
1000
Order

1000+:

$1.7852

 SIHF22N65E-GE3-ND Datasheet
SIHA22N60AE-E3 SIHA22N60AE-E3-
ND		 SIHA22N60AE-E3 Vishay Siliconix
View more  Series: E
 Packaging: Tube
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 20A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
 Power Dissipation (Max): 33W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220 Full Pack
 Package / Case: TO-220-3 Full Pack
893
Order

1+:

$2.6397

10+:

$2.3549

100+:

$1.9308

500+:

$1.5635

1000+:

$1.3186

 SIHA22N60AE-E3-ND Datasheet
IPA80R750P7XKSA1 IPA80R750P7XKSA
1-ND		 IPA80R750P7XKSA
1		 Infineon Technologies
View more  Series: CoolMOS P7
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 800V
 Current - Continuous Drain (Id) @ 25C: 7A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 140A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
 Power Dissipation (Max): 27W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: PG-TO220 Full Pack
 Package / Case: TO-220-3 Full Pack
460
Order

1+:

$1.2222

10+:

$1.0842

100+:

$0.857

500+:

$0.6646

1000+:

$0.5247

 IPA80R750P7XKSA1-ND Datasheet
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