STF16N50M2 Allicdata Electronics
Allicdata Part #:

497-15114-5-ND

Manufacturer Part#:

STF16N50M2

Price: $ 3.35
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 13A TO-220FP
More Detail: N-Channel 500V 13A (Tc) 25W (Tc) Through Hole TO-2...
DataSheet: STF16N50M2 datasheetSTF16N50M2 Datasheet/PDF
Quantity: 896
1 +: $ 3.35000
10 +: $ 3.24950
100 +: $ 3.18250
1000 +: $ 3.11550
10000 +: $ 3.01500
Stock 896Can Ship Immediately
$ 3.35
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF16N50M2 is a state-of-the-art MOSFET transistor designed for industrial applications. It is designed to handle higher power requirements and can operate at higher frequencies than standard MOSFET devices. The STF16N50M2 is a single n-channel enhancement mode Power MOSFET, manufactured using the latest in advanced silicon technology.

STF16N50M2 is a MOSFET with low on-state resistance, high current and low drop out voltage. The device is specifically designed for higher voltage, higher power applications. It is capable of handling up to 16V at 500mA and is also available in a 50V version, for higher power applications. A wide range of threshold voltages are available, ranging from 2V to 16V.

The STF16N50M2 is an excellent choice for high-voltage switching applications, and is well suited to DC/DC converters and switch-mode power supplies. It is also suitable for audio and instrumentation applications, thanks to its low input and output capacitances, and low gate charge. The device is designed to be able to handle large transient currents and withstand continuous high-current operation without damage.

The STF16N50M2 features an advanced self-protection circuit, which monitors the current, voltage and temperature of the device to protect it from damage. This self-protection also provides the user with an indication of when the device has been overloaded, so that corrective action can be taken to prevent further problems.

The STF16N50M2 is a versatile MOSFET with many applications. It is an excellent choice for high-voltage switched applications, and is suitable for powering circuits for motor control, lighting control, industrial automation and other high voltage applications. It is also suitable for DC/DC converters, switch-mode power supplies, and audio and instrumentation applications.

The working principle of the STF16N50M2 is quite simple. When a voltage is applied to the gate terminal, it allows current to flow from the source to the drain. This current is controlled by the current through the gate. If the gate current is zero, then no current will flow through the transistor. The amount of current that flows is dependent on the voltage applied to the gate and the resistance of the source-drain path.

In summary, the STF16N50M2 is an advanced MOSFET transistor designed for high-voltage and high-power applications. It has a low on-state resistance, high current and low drop out voltage. It features an advanced self-protection circuit, and is suitable for many applications including DC/DC converters, switch-mode power supplies, and audio and instrumentation applications. The working principle of the STF16N50M2 is based on the application of a voltage to the gate terminal, which allows current to flow from the source to the drain.

The specific data is subject to PDF, and the above content is for reference

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