
Allicdata Part #: | IPA80R1K0CEXKSA1-ND |
Manufacturer Part#: |
IPA80R1K0CEXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V TO-220-3 |
More Detail: | N-Channel 800V 3.6A (Tc) 32W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 785pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IPA80R1K0CEXKSA1 is a single-channel enhancement mode N-MOSFET transistor. It has an R DS(on) of 0.1 ohm at a V GS of 10V, and a drain current of 1A. As such, it is well suited for use in power management applications. In addition, its low input capacitance (2.1 pF) makes it well suited for high-speed switching applications.
The single-channel IPA80R1K0CEXKSA1 MOSFET transistor is designed to be used as either a grounded or floating load. When acting as a grounded load, the transistor is turned on or off when the gate is held at the desired voltage. When acting as a floating load, the voltage at the gate is held above the source voltage to control the transistor\'s current. As the source voltage is increased, the drain current increases, allowing for fine control of the current.
The MOSFET transistor is highly energy efficient. The resistance of the drain-source junction is kept low when the transistor is in the on state, and therefore very little current is wasted in switching applications. Additionally, the high input capacitance of the MOSFET transistor can help reduce switching losses in high speed switching applications.
The MOSFET transistor has a wide range of applications, including power conversion, motor control, power management, and switching applications. It is well suited for use in high-power systems, as well as low-power systems due to its high current capability. In addition, its low on-state resistance makes it ideal for use in applications where load current is highly regulated. Additionally, the transistor\'s low input capacitance makes it well suited for high-speed switching applications.
The MOSFET transistor has several advantages over other FET transistors. It is less susceptible to thermal runaway, which makes it well suited for use in high-temperature applications. It also has a higher breakdown voltage than other FET transistors, making it ideal for higher power applications. Additionally, the MOSFET transistor has a low input capacitance, making it well suited for high speed switching applications.
In summary, the single-channel IPA80R1K0CEXKSA1 MOSFET transistor is a versatile and highly energy-efficient tool for a variety of power management, motor control, and switching applications. Its low on-state resistance, high breakdown voltage, and low input capacitance make it well suited for high power and high speed switching applications. It is an ideal solution for those who need reliable, energy efficient control of their applications.
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