Allicdata Part #: | 2SJ438MDKQ(M-ND |
Manufacturer Part#: |
2SJ438,MDKQ(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH |
More Detail: | Through Hole TO-220NIS |
DataSheet: | 2SJ438,MDKQ(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Bulk |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220NIS |
Package / Case: | TO-220-3 Full Pack |
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Transistors, as one of the most fundamental electronic components, are widely used in various electronic circuits and are necessary in many applications. 2SJ438 and MDKQ (M application field and working principle) are two types of transistors, specifically classified as Field Effect Transistors (FETs), MOSFETs2, and more specifically, single ones. This article will cover the application field and working principle of 2SJ438 and MDKQ.
The 2SJ438 and MDKQ both belong to the JFET family, or Junction Field Effect Transistors. They belong in the MOSFET (Metal Oxide Semiconductor Field Effect Transistors) subclass, and they are both n-channel single transistors.The voltage control of the 2SJ438 and MDKQ is enhanced by their gate-source feedback loops. This strictly controls the acting current (the drain current). They have higher breakdown voltage and higher current gain as compared to other FETs.2SJ438 and MDKQ are featured in many applications, including but not limited to high frequency amplifiers, low noise amplifiers, analog switching, motor drive, etc. Additionally, they are used in applications such as automotive, medical, telecommunications, and others, due to their high performance in stability, reliability, low power consumption, and cost effectiveness.
The working principle of 2SJ438 and MDKQ is based on the voltage potential difference across the semiconductor material which forms the conductive channels when it is subjected to an applied electric field. The operating voltage for the 2SJ438 and MDKQ is between 0.6V and 18V, and their operating current is from 100mA to 1A. They work on the principle of electron flow, where an electric field is applied across the source and drain electrodes. This is done by applying a positive voltage (Vds) to the drain and a negative voltage (Vgs) to the gate. Depending on the applied voltage, the channel of conducting electrons will change its conductivity, thus resulting in an output current.
The physical structure of the 2SJ438 and MDKQ is designed in such a way that it offers maximum performance in terms of stability and current gain. They are made using advanced technology which ensures higher efficiency, better performance and greater reliability. Their structure is also designed to reduce their noise output, thus making them ideal for use in low noise applications.
In summary, 2SJ438 and MDKQ are two types of Field Effect Transistors that are classified as MOSFETs and single. They can be used for a variety of applications, due to their high performance, stability, reliability and low power consumption. They work on the principle of voltage potential difference across a semiconductor material, and their operating voltage and current are from 0.6V to 18V and from 100mA to 1A respectively. Finally, their physical structure is designed for maximum performance, stability, and reduce noise output.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2SJ438(AISIN,A,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(AISIN,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(CANO,A,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(CANO,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,MDKQ(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,MDKQ(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,Q(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,Q(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
ERG-2SJ433A | Panasonic El... | 0.02 $ | 1000 | RES 43K OHM 2W 5% AXIAL43... |
ERG-2SJ471 | Panasonic El... | 0.18 $ | 266 | RES 470 OHM 2W 5% AXIAL47... |
ERG-2SJ471A | Panasonic El... | 0.03 $ | 21000 | RES 470 OHM 2W 5% AXIAL47... |
ERX-2SJ4R7A | Panasonic El... | 0.03 $ | 9000 | RES 4.7 OHM 2W 5% AXIAL4.... |
ERG-2SJ470A | Panasonic El... | 0.03 $ | 3000 | RES 47 OHM 2W 5% AXIAL47 ... |
ERX-2SJ4R3 | Panasonic El... | 0.18 $ | 2769 | RES 4.3 OHM 2W 5% AXIAL4.... |
ERG-2SJ431 | Panasonic El... | 0.18 $ | 2619 | RES 430 OHM 2W 5% AXIAL43... |
ERG-2SJ430 | Panasonic El... | 0.18 $ | 1768 | RES 43 OHM 2W 5% AXIAL43 ... |
ERG-2SJ473 | Panasonic El... | 0.18 $ | 2661 | RES 47K OHM 2W 5% AXIAL47... |
ERG-2SJ472 | Panasonic El... | 0.18 $ | 1816 | RES 4.7K OHM 2W 5% AXIAL4... |
ERG-2SJ473A | Panasonic El... | 0.03 $ | 15000 | RES 47K OHM 2W 5% AXIAL47... |
ERG-2SJ430A | Panasonic El... | 0.03 $ | 15000 | RES 43 OHM 2W 5% AXIAL43 ... |
ERG-2SJ472A | Panasonic El... | 0.03 $ | 12000 | RES 4.7K OHM 2W 5% AXIAL4... |
ERG-2SJ431A | Panasonic El... | 0.03 $ | 6000 | RES 430 OHM 2W 5% AXIAL43... |
ERX-2SJ4R3A | Panasonic El... | 0.03 $ | 6000 | RES 4.3 OHM 2W 5% AXIAL4.... |
ERX-2SJ4R7V | Panasonic El... | 0.03 $ | 1000 | RES 4.7 OHM 2W 5% AXIAL4.... |
ERX-2SJ4R7 | Panasonic El... | 0.18 $ | 92 | RES 4.7 OHM 2W 5% AXIAL4.... |
ERG-2SJ470 | Panasonic El... | 0.18 $ | 1000 | RES 47 OHM 2W 5% AXIAL47 ... |
ERG-2SJ432A | Panasonic El... | 0.03 $ | 1000 | RES 4.3K OHM 2W 5% AXIAL4... |
ERG-2SJ432 | Panasonic El... | 0.18 $ | 1000 | RES 4.3K OHM 2W 5% AXIAL4... |
ERG-2SJ471V | Panasonic El... | 0.03 $ | 1000 | RES 470 OHM 2W 5% AXIAL47... |
ERG-2SJ473V | Panasonic El... | 0.03 $ | 1000 | RES 47K OHM 2W 5% AXIAL47... |
ERG-2SJ433 | Panasonic El... | 0.18 $ | 1000 | RES 43K OHM 2W 5% AXIAL43... |
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