IPAN60R800CEXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPAN60R800CEXKSA1 is a type of switching field-effect transistor (FET). It is a single transistor device and functions as a semiconductor switch or voltage-controlled resistor in various electronics applications. FETs are commonly used in power control, signal amplification, and signal switching applications. They offer major advantages over bipolar junction transistors (BJTs) due to their lower input capacitance and higher gain. The IPAN60R800CEXKSA1 is no exception and it is the perfect choice for many applications, due to its high switching speed, low on-resistance, and ability to handle greater power. The IPAN60R800CEXKSA1 is an N-channel enhancement type FET that operates as a high-speed switch. It has an on-state resistance of 0.07-0.5Ω and a low input capacitance of 125pF. This FET is designed to be used in both high-frequency and high-efficiency applications, such as motor drives and rectifiers. It has an operating temperature range of -55°C to 150°C and can handle maximum power dissipation of 800 Watts, making it suitable for high-power applications. The drain-source on-state voltage rating of the IPAN60R800CEXKSA1 is 60V and its drain-source breakdown voltage is 80V. The major application of FETs is amplifying electronic signals, which is done by manipulating their channel resistance. The switching of the IPAN60R800CEXKSA1 FET is controlled by an external voltage source that is applied to the gate terminal. As the gate voltage changes, the channel will become narrow or wide and this will in turn change the device’s conductivity. When the gate voltage is applied, the device will saturate and the current flow will be in proportion to the gate voltage. This makes it ideal for controlling digital systems, communication devices, and various other types of electronic devices. The IPAN60R800CEXKSA1 FET can also be used as a voltage-controlled resistor in applications that require linear output impedances. In this application, a voltage signal is applied to the gate terminal, which changes the internal resistance of the FET - making it higher or lower depending on the voltage applied. This makes it ideal for applications such as level control systems and signal processing applications. The IPAN60R800CEXKSA1 FET is a versatile device and it is suitable for a wide range of applications. It is used in power converters and rectifiers to reduce losses. It is also often used in circuits that need to control high currents, due to its high on-state resistance. It is also used in frequency control circuits and signal amplifiers, where its high switching speed is a major advantage. The FET is a reliable and highly efficient device. It is durable and offers a long service life. It is also very cost-effective, making it an ideal choice for a variety of electronics applications. In addition, it is also environmentally friendly, as it does not emit any dangerous toxins or pollutants in the environment. Overall, the IPAN60R800CEXKSA1 FET is a reliable and versatile device. It offers many advantages over other switching devices, such as BJTs, making it the perfect choice for a variety of applications. Its high switching speed, low on-resistance, and ability to handle higher power make it suitable for many applications. In addition, it is also cost-effective and environmentally friendly.

The specific data is subject to PDF, and the above content is for reference