Allicdata Part #: | 2SJ438MDKQ(J-ND |
Manufacturer Part#: |
2SJ438,MDKQ(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH |
More Detail: | Through Hole TO-220NIS |
DataSheet: | 2SJ438,MDKQ(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Bulk |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220NIS |
Package / Case: | TO-220-3 Full Pack |
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Transistors are a type of active electronic components which are widely used in various electronic circuits and systems. FETs - field effect transistors, MosFETs - metal-oxide semiconductor field-effect transistors are two types of transistors that are used in different applications. FETs and MosFETs have different working principles and applications. The 2SJ438,MDKQ(J is a single, metal-oxide semiconductor field-effect transistor which is used in power control and amplification of audio signals.
Working Principle of 2SJ438,MDKQ(J
The 2SJ438, MDKQ(J is a type of single channel, enhancement MOSFET with an insulated gate. It is used for high speed switching operations and also in many amplifiers. It has a high input impedance and low output impedance which helps it to control or switch large currents with low voltages. The working principle of 2SJ438,MDKQ(J involves the control of electron flow from the source to the drain in an insulated gate.
In the input mode, the gate is connected to a voltage source and the voltage is measured at the drain and source pins. A voltage difference between the gate and drain pins induce a current flow across the channel and an electric field electrostatically generated by the gate attracts the electrons and this enables current conduction across the channel.
In the output mode, the voltage between the source and gate is measured and the electron flow is dependent on it. An increase in the source-gate voltage causes an increase in the current passing through the channel and this results in increased power dissipation.
Applications of 2SJ438,MDKQ(J
The 2SJ438,MDKQ(J can be used in a variety of applications in power control or amplification of audio signals. Some of the common applications of the 2SJ438,MDKQ(J include controlling the output power of amplifiers, powering an audio amplifier, controlling and/or switching high-voltage or high-current loads, filtering high-frequency noise in audio amplifiers, and providing protection against overloads of power supplies in audio systems.
The 2SJ438,MDKQ(J can also be used in combination with other types of transistors and integrated circuits to build a variety of electronic circuits and systems. It can be used in various audio and amplifier circuits as well as switching, timer and pulse-width modulation circuits.
The 2SJ438,MDKQ(J has a number of advantageous features such as high-current handling capability, low power dissipation, and fast switching response time. These features make it ideal for use in a variety of power control and audio amplification applications.
Conclusion
The 2SJ438,MDKQ(J is a type of single channel, enhancement MOSFET with an insulated gate that is used for high speed switching operations and audio amplification applications. It has a high input impedance and low output impedance which make it suitable for controlling or switching large currents with low voltages. It can be used in combination with other types of transistors and integrated circuits to build a variety of electronic circuits and systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2SJ438(AISIN,A,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(AISIN,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(CANO,A,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438(CANO,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,MDKQ(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,MDKQ(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,Q(J | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
2SJ438,Q(M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CHThrough Hole T... |
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ERG-2SJ431A | Panasonic El... | 0.03 $ | 6000 | RES 430 OHM 2W 5% AXIAL43... |
ERX-2SJ4R3A | Panasonic El... | 0.03 $ | 6000 | RES 4.3 OHM 2W 5% AXIAL4.... |
ERX-2SJ4R7V | Panasonic El... | 0.03 $ | 1000 | RES 4.7 OHM 2W 5% AXIAL4.... |
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ERG-2SJ471V | Panasonic El... | 0.03 $ | 1000 | RES 470 OHM 2W 5% AXIAL47... |
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