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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SPW11N80C3FKSA1 -ND	SPW11N80C3FKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680A Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	1+: $2.2302 10+: $1.9908 240+: $1.6324 720+: $1.3219 1200+: $1.1148
IPA60R125C6XKSA 1-ND	IPA60R125C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 960A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $3.7296 10+: $3.3289 100+: $2.7297 500+: $2.2104 1000+: $1.8642
IPD60R2K1CEBTMA 1TR-ND	IPD60R2K1CEBTMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 60A Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Power Dissipation (Max): 22W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.1408
BSZ0501NSIATMA1 -ND	BSZ0501NSIATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 25A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.4132
IPD65R660CFDATM A1-ND	IPD65R660CFDATM A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4601
IRFR5305TRR-ND	IRFR5305TRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF5803TR-ND	IRF5803TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6(TSOP-6) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
SPP35N10IN-ND	SPP35N10	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V Vgs(th) (Max) @ Id: 4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--
SPA04N50C3XKSA1 -ND	SPA04N50C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 200A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IRF2807ZL-ND	IRF2807ZL	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFSL4610PBF-ND	IRFSL4610PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRFS52N15DPBF-N D	IRFS52N15DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRLR3915PBF-ND	IRLR3915PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRF9Z34NSPBF-ND	IRF9Z34NSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL1104SPBF-ND	IRL1104SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF7467PBF-ND	IRF7467PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
BSO064N03S-ND	BSO064N03S	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 15V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
BAT1504RE6327HT SA1TR-ND	BAT1504RE6327HT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky - 1 Pair Series Connection Voltage - Peak Reverse (Max): 4V Current - Max: 110mA Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz Resistance @ If, F: 18 Ohm @ 5mA, 1MHz Operating Temperature: 150C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BAT15-04	1000 Order	1+: $0
IRG6I330U-110P- ND	IRG6I330U-110P	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Input Type: Standard Td (on/off) @ 25C: 39ns/120ns Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Base Part Number: IRG6I330UPBF	1000 Order	1+: $0
BSP613PL6327HUS A1TR-ND	BSP613PL6327HUS A1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
IPB110N06LGINCT -ND	IPB110N06L G	Infineon Technologies	View more Series: OptiMOS Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 78A, 10V Vgs(th) (Max) @ Id: 2V @ 94A Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 30V Power Dissipation (Max): 158W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRLU7843-701PBF -ND	IRLU7843-701PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: I-PAK (LF701) Package / Case: TO-252-4, DPak (3 Leads + Tab)	1000 Order	1+: $0
TT61N12KOFHPSA1 -ND	TT61N12KOFHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.2kV Current - On State (It (AV)) (Max): 76A Current - On State (It (RMS)) (Max): 120A Voltage - Gate Trigger (Vgt) (Max): 1.4V Current - Gate Trigger (Igt) (Max): 120mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	15+: $52.9595
IRLR4343TRPBF-N D	IRLR4343TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Power Dissipation (Max): 79W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPD15N06S2L64AT MA1TR-ND	IPD15N06S2L64AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2V @ 14A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFB4310GPBF-ND	IRFB4310GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
BSP324L6327HTSA 1TR-ND	BSP324L6327HTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94A Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
SN7002NH6327XTS A1TR-ND	SN7002NH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, SIPMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TT140N18KOFHPSA 1-ND	TT140N18KOFHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 159A Current - On State (It (RMS)) (Max): 250A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4000A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	8+: $82.1457
BAS116E6327HTSA 1TR-ND	BAS116E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5s Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150C (Max) Base Part Number: BAS116	1000 Order	--
BAS4005WH6327XT SA1TR-ND	BAS4005WH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal = Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1A @ 30V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BAS40-05W	1000 Order	30000+: $0.0366
1EDI60I12AFXUMA 1TR-ND	1EDI60I12AFXUMA 1	Infineon Technologies	View more Series: EiceDriver Packaging: Tape & Reel (TR) Part Status: Active Technology: Magnetic Coupling Number of Channels: 1 Rise / Fall Time (Typ): 10ns, 9ns Voltage - Supply: 13 V ~ 35 V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-51	1000 Order	2500+: $0.6509
IRS20957STRPBFT R-ND	IRS20957STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Type: Class D Output Type: 1-Channel (Mono) Voltage - Supply: 10 V ~ 15 V Features: Short-Circuit Protection, Shutdown Mounting Type: Surface Mount Operating Temperature: -40C ~ 125C (TA) Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Base Part Number: IRS20957	1022 Order	--
XMC1100T016F000 8AAXUMA1-ND	XMC1100T016F000 8AAXUMA1	Infineon Technologies	View more Series: XMC1000 Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: IC, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, IS, POR, PWM, WDT Number of I/O: 11 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 6x12b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-16-8	1000 Order	1+: $0
XC2364A104F100L ABHXUMA1-ND	XC2364A104F100L ABHXUMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
BTS5576GXUMA1TR -ND	BTS5576GXUMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: DC DC Regulator Topology: Switched Capacitor (Charge Pump) Internal Switch(s): Yes Number of Outputs: 5 Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 28V Frequency: 2MHz Dimming: PWM Applications: Automotive Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.295", 7.50mm Width) Supplier Device Package: PG-DSO-36 Base Part Number: BTS5576	1000 Order	1+: $0
V8926300NHPSA1- ND	V8926300NHPSA1	Infineon Technologies	View more Part Status: Active Type: Mount Shape: Square Color: Natural Length: 3.150" (80.00mm) Width: 3.150" (80.00mm) Height: 2.559" (65.00mm)	1000 Order	1+: $82.1079
BCV61BE6327HTSA 1TR-ND	BCV61BE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Voltage - Rated: 30V Current Rating: 100mA Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143-4 Base Part Number: BCV61	1000 Order	3000+: $0.0576 6000+: $0.0518 15000+: $0.046 30000+: $0.0432 75000+: $0.0384
FF600R12KE4EBOS A1-ND	FF600R12KE4EBOS A1	Infineon Technologies	View more Series: C Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 600A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 38nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	10 Order	1+: $125.263 10+: $119.972
FP10R06W1E3BOMA 1-ND	FP10R06W1E3BOMA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Power - Max: 68W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 550pF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	24+: $17.4318

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