| Allicdata Part #: | IRFB4310GPBF-ND |
| Manufacturer Part#: |
IRFB4310GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 130A TO-220AB |
| More Detail: | N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO... |
| DataSheet: | IRFB4310GPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7670pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRFB4310GPBF is a field effect transistor (FET) with a 10V gate-to-source breakdown voltage. This particular device is a single enhancement type, meaning that it operates as a normally-off switch. It is widely used in medium and high power applications, such as motor control, DC-DC power converters, heavy industrial and automotive applications. This article will discuss the application field and working principle of the IRFB4310GPBF.
The IRFB4310GPBF has a typical on-state resistance of 40 mOhms, with a maximum current rating of 24A and a nominal dissipated power of 115W. This makes it a great choice for medium and high power applications, as it can transfer large amounts of power without becoming thermally overloaded. It is also suitable for applications where low gate-to-source voltage is required, as its maximum gate-to-source voltage is 10V.
The IRFB4310GPBF is most commonly used in medium and high power switching applications. It can be used to control motor speed and direction, as well as in DC-DC power supplies, where it is often used as a switch to control the directions of current flow. It can also be used in heavy industrial and automotive applications, where its low gate-to-source voltage requirement is beneficial. In addition, the IRFB4310GPBF is often used as a gate driver for other FETs and MOSFETs.
The IRFB4310GPBF works according to the same basic principle as all FETs. The current flow between the drain and source (known as the channel) is governed by an electric field, which is provided by the gate voltage. This electric field can be increased or decreased by a voltage applied to the gate, thus controlling the amount of current that can flow between the drain and source. In the case of the IRFB4310GPBF, the electric field is maintained at a constant level, meaning that it is a static device.
The IRFB4310GPBF is ideal for medium and high power applications due to its low on-state resistance, high current rating, and low gate-to-source voltage requirement. It is also suitable for applications where good efficiency is desired, as it can operate as a normally-off switch, reducing power wastage due to the effects of leakage. Additionally, it can be used as a gate driver for other FETs and MOSFETs, making it a versatile component.
In summary, the IRFB4310GPBF is a single enhancement type FET which is suitable for medium and high power applications. It has a low on-state resistance, high current rating, and low gate-to-source voltage requirement, making it ideal for many different applications. Additionally, it can be used as a gate driver for other FETs and MOSFETs. Therefore, the IRFB4310GPBF is a versatile component and a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRFB4410PBF | Infineon Tec... | -- | 1484 | MOSFET N-CH 100V 96A TO-2... |
| IRFBF20STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 900V 1.7A D2P... |
| IRFBA90N20DPBF | Infineon Tec... | 5.22 $ | 502 | MOSFET N-CH 200V 98A SUPE... |
| IRFB4020PBF | Infineon Tec... | -- | 12875 | MOSFET N-CH 200V 18A TO-2... |
| IRFB18N50KPBF | Vishay Silic... | -- | 965 | MOSFET N-CH 500V 17A TO-2... |
| IRFBC30LPBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.6A TO-... |
| IRFBC40AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A TO-... |
| IRFBC40ASTRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 6.2A D2P... |
| IRFBE30STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 4.1A D2P... |
| IRFBC30STRLPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 3.6A D2P... |
| IRFBC40LCSTRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A D2P... |
| IRFBA1404P | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 206A SUPE... |
| IRFB9N60APBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 9.2A TO-... |
| IRFBE20STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A D2P... |
| IRFB3207ZGPBF | Infineon Tec... | -- | 20 | MOSFET N-CH 75V 120A TO-2... |
| IRFB4110PBF | Infineon Tec... | -- | 12000 | MOSFET N-CH 100V 120A TO-... |
| IRFBC20STRLPBF | Vishay Silic... | 1.18 $ | 1000 | MOSFET N-CH 600V 2.2A D2P... |
| IRFBC20STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 2.2A D2P... |
| IRFB4310GPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 130A TO-... |
| IRFB3206GPBF | Infineon Tec... | -- | 65 | MOSFET N-CH 60V 120A TO22... |
| IRFB4321PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 83A TO-2... |
| IRFB9N60A | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.2A TO-... |
| IRFBC40 | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 6.2A TO-... |
| IRFB33N15D | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 33A TO-2... |
| IRFB9N30A | Vishay Silic... | -- | 1000 | MOSFET N-CH 300V 9.3A TO-... |
| IRFB3307 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 130A TO-2... |
| IRFB7530PBF | Infineon Tec... | -- | 1000 | MOSFET N CH 60V 195A TO-2... |
| IRFBC20SPBF | Vishay Silic... | -- | 429 | MOSFET N-CH 600V 2.2A D2P... |
| IRFBC30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.6A TO-... |
| IRFB3077PBF | Infineon Tec... | -- | 336 | MOSFET N-CH 75V 120A TO-2... |
| IRFBE30S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 4.1A D2P... |
| IRFBA1405PPBF | Infineon Tec... | -- | 58 | MOSFET N-CH 55V 174A SUPE... |
| IRFB7446PBF | Infineon Tec... | -- | 4000 | MOSFET N-CH 40V 120A TO22... |
| IRFB16N50K | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 17A TO-2... |
| IRFBC20PBF | Vishay Silic... | -- | 4220 | MOSFET N-CH 600V 2.2A TO-... |
| IRFB3006PBF | Infineon Tec... | -- | 2785 | MOSFET N-CH 60V 195A TO-2... |
| IRFBF30PBF | Vishay Silic... | -- | 1033 | MOSFET N-CH 900V 3.6A TO-... |
| IRFBE20L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A TO-... |
| IRFB17N50L | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 16A TO-2... |
| IRFB3006GPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 195A TO22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IRFB4310GPBF Datasheet/PDF