IRFB4310GPBF Allicdata Electronics
Allicdata Part #:

IRFB4310GPBF-ND

Manufacturer Part#:

IRFB4310GPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 130A TO-220AB
More Detail: N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO...
DataSheet: IRFB4310GPBF datasheetIRFB4310GPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFB4310GPBF is a field effect transistor (FET) with a 10V gate-to-source breakdown voltage. This particular device is a single enhancement type, meaning that it operates as a normally-off switch. It is widely used in medium and high power applications, such as motor control, DC-DC power converters, heavy industrial and automotive applications. This article will discuss the application field and working principle of the IRFB4310GPBF.

The IRFB4310GPBF has a typical on-state resistance of 40 mOhms, with a maximum current rating of 24A and a nominal dissipated power of 115W. This makes it a great choice for medium and high power applications, as it can transfer large amounts of power without becoming thermally overloaded. It is also suitable for applications where low gate-to-source voltage is required, as its maximum gate-to-source voltage is 10V.

The IRFB4310GPBF is most commonly used in medium and high power switching applications. It can be used to control motor speed and direction, as well as in DC-DC power supplies, where it is often used as a switch to control the directions of current flow. It can also be used in heavy industrial and automotive applications, where its low gate-to-source voltage requirement is beneficial. In addition, the IRFB4310GPBF is often used as a gate driver for other FETs and MOSFETs.

The IRFB4310GPBF works according to the same basic principle as all FETs. The current flow between the drain and source (known as the channel) is governed by an electric field, which is provided by the gate voltage. This electric field can be increased or decreased by a voltage applied to the gate, thus controlling the amount of current that can flow between the drain and source. In the case of the IRFB4310GPBF, the electric field is maintained at a constant level, meaning that it is a static device.

The IRFB4310GPBF is ideal for medium and high power applications due to its low on-state resistance, high current rating, and low gate-to-source voltage requirement. It is also suitable for applications where good efficiency is desired, as it can operate as a normally-off switch, reducing power wastage due to the effects of leakage. Additionally, it can be used as a gate driver for other FETs and MOSFETs, making it a versatile component.

In summary, the IRFB4310GPBF is a single enhancement type FET which is suitable for medium and high power applications. It has a low on-state resistance, high current rating, and low gate-to-source voltage requirement, making it ideal for many different applications. Additionally, it can be used as a gate driver for other FETs and MOSFETs. Therefore, the IRFB4310GPBF is a versatile component and a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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