BSP613PL6327HUSA1 Allicdata Electronics
Allicdata Part #:

BSP613PL6327HUSA1TR-ND

Manufacturer Part#:

BSP613PL6327HUSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 60V 2.9A SOT-223
More Detail: P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG...
DataSheet: BSP613PL6327HUSA1 datasheetBSP613PL6327HUSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP613PL6327HUSA1 is a Power MOSFET manufactured by Infineon Technologies. It is part of the CoolMOS series of power transistors. Power MOSFETs such as the BSP613PL6327HUSA1 are used in power management and power conversion applications. They are ideal for high-current, high-frequency switching. As such, they are used in a wide range of applications ranging from DC-DC converters and motor control to audio/video equipment.

The BSP613PL6327HUSA1 is a Vertical Double Diffused Metal Oxide Silicon (VDMOS) transistor. It has an N-channel MOSFET configuration with a maximum drain-source breakdown voltage of 650V. The maximum drain current of the device is 31A and the maximum drain-source on-state resistance is 0.0041 ohms. It features a gate-source threshold voltage of 3.0V, which is ideal for medium- to high-power applications.

The BSP613PL6327HUSA1 employs both drain-source voltage and gate-source voltage as control inputs. With a gate-source voltage of 3.0V, the device can be used to switch both AC and DC loads. The device is also capable of operating at very high frequencies, making it an ideal choice for high-speed switching applications.

The working principle of the BSP613PL6327HUSA1 is relatively straightforward. When a voltage is applied to the gate terminal, it creates an electric field within the device. This field causes a change in the charge carriers within the device and modifies the conductivity of the channel between the source and drain terminals. By controlling the voltage applied to the gate terminal, the conductivity of the channel can be controlled, allowing the device to be used as a switch.

The BSP613PL6327HUSA1 is used in a variety of applications. It is used in DC-DC converters and motor control circuits. It is particularly useful in applications that require high currents, high frequencies, and/or a high operating voltage. It is therefore used in a wide variety of home appliances and industrial equipment, including AC/DC power supplies, inverters, and motor controllers.

Additionally, the BSP613PL6327HUSA1 can also be used in audio/video equipment. Its high switching frequencies make it ideal for use in amplifiers and other audio/video-processing applications. Its relatively low gate threshold voltage also makes it more suitable for low-calibre signal chains, such as those found in integrated circuits.

Overall, the BSP613PL6327HUSA1 is a versatile and reliable power MOSFET. It has a wide range of applications and can be used for both high- and low-voltage switching, as well as for high-frequency signal processing. It is an ideal choice for power management and power conversion applications, making it suitable for both home and industrial use.

The specific data is subject to PDF, and the above content is for reference

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