IRF5803TR Allicdata Electronics
Allicdata Part #:

IRF5803TR-ND

Manufacturer Part#:

IRF5803TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 40V 3.4A 6-TSOP
More Detail: P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micr...
DataSheet: IRF5803TR datasheetIRF5803TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: Micro6™(TSOP-6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF5803TR is a field effect transistor or FET that uses an insulated gate region to control a current flow. The IRF5803TR FET works differently from traditional transistors, using an electrical field instead of a signal current to switch on and off the main current flow. While operating, the FET acts as a resistor between the source and drain terminals and signals to determine what the current flow should be. Due to its unique design, the IRF5803TR can be used in a range of applications.

Application Field of the IRF5803TR

The IRF5803TR is a versatile FET and can be used in a number of applications. Its ability to act as a resistor in high voltage/low current applications makes it ideal for applications where a low-power dissipating device is required. It is also ideal for switching applications, such as motor drives, where it can be used to switch the power for the motor on and off. It can also be used in many audio applications, such as audio amplifiers, equalizers, and filters, or it can be used in power management circuits.

Working Principle of the IRF5803TR

The IRF5803TR operates by utilizing an insulated gate region to control the electric field that exists between the source and drain terminals. In order to activate the FET, a voltage is applied to the gate, which generates a channel between the source and drain. This channel allows a current to flow freely through it, allowing for the current flow to be controlled by a signal voltage or current. The FET acts like a resistor and can be used to limit or vary the current flow. The gate voltage must be sufficient enough to activate the FET; however, it should be kept at the minimum necessary to avoid damaging the FET.

Conclusion

The IRF5803TR is a versatile and reliable FET that can be used in a range of applications. It can be used as a resistor in high voltage/low current applications, switching applications, audio applications, and in power management circuits. The FET works by utilizing an insulated gate region to generate an electric field between the source and drain terminals, allowing a current to flow freely through it depending on the amount of voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference

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