| Allicdata Part #: | IRF5803TR-ND |
| Manufacturer Part#: |
IRF5803TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 40V 3.4A 6-TSOP |
| More Detail: | P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micr... |
| DataSheet: | IRF5803TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | Micro6™(TSOP-6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 112 mOhm @ 3.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRF5803TR is a field effect transistor or FET that uses an insulated gate region to control a current flow. The IRF5803TR FET works differently from traditional transistors, using an electrical field instead of a signal current to switch on and off the main current flow. While operating, the FET acts as a resistor between the source and drain terminals and signals to determine what the current flow should be. Due to its unique design, the IRF5803TR can be used in a range of applications.
Application Field of the IRF5803TR
The IRF5803TR is a versatile FET and can be used in a number of applications. Its ability to act as a resistor in high voltage/low current applications makes it ideal for applications where a low-power dissipating device is required. It is also ideal for switching applications, such as motor drives, where it can be used to switch the power for the motor on and off. It can also be used in many audio applications, such as audio amplifiers, equalizers, and filters, or it can be used in power management circuits.
Working Principle of the IRF5803TR
The IRF5803TR operates by utilizing an insulated gate region to control the electric field that exists between the source and drain terminals. In order to activate the FET, a voltage is applied to the gate, which generates a channel between the source and drain. This channel allows a current to flow freely through it, allowing for the current flow to be controlled by a signal voltage or current. The FET acts like a resistor and can be used to limit or vary the current flow. The gate voltage must be sufficient enough to activate the FET; however, it should be kept at the minimum necessary to avoid damaging the FET.
Conclusion
The IRF5803TR is a versatile and reliable FET that can be used in a range of applications. It can be used as a resistor in high voltage/low current applications, switching applications, audio applications, and in power management circuits. The FET works by utilizing an insulated gate region to generate an electric field between the source and drain terminals, allowing a current to flow freely through it depending on the amount of voltage applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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IRF5803TR Datasheet/PDF