| Allicdata Part #: | IRFSL4610PBF-ND |
| Manufacturer Part#: |
IRFSL4610PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 73A TO-262 |
| More Detail: | N-Channel 100V 73A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: |  IRFSL4610PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRFSL4610PBF is a type of single field effect transistor, or FET, that is widely used in the electronics industry. This particular unit is produced by International Rectifier, a company that produces discrete and integrated circuits. There are many applications for the IRFSL4610PBF, including use in radio frequency, power, and audio systems. In addition, the IRFSL4610PBF provides protection against overloads, so it can be used in a wide range of applications.The IRFSL4610PBF is a N-channel enhancement mode MOSFET. It has a drain current that ranges from 19.5A to 22 A, a maximum drain-source voltage of 100 V, and a maximum power dissipation of 206 W. It also has a gate threshold voltage of 3V, a gate-source voltage of 16 V, and a drain-source on-resistance of 0.15 Ω. It is also highly resistant to thermal and mechanical shock.The main advantage of these MOSFETs is their high efficiency and low impedance. With a high-efficiency, low impedance MOSFET, users can enjoy higher current gain and lower power dissipation. This is highly beneficial in applications where power consumption is a major concern, such as in radio transmitters and power amplifiers.The working principle of the IRFSL4610PBF is very simple. When a voltage is applied to the gate, electrons are attracted from the substrate and form a conductive channel at the interface between the substrate and gate. This creates a conductive path between the drain and the source. The current that flows through this path is proportional to the voltage applied to the gate.The IRFSL4610PBF is extremely versatile and can be used in a wide variety of applications. It can be used as a power switch, in audio systems, in power amplifiers, as a protection device, and in a variety of other applications. In addition, its high efficiency and low impedance make it an excellent choice for many projects.The IRFSL4610PBF is a highly dependable and versatile field effect transistor. Its wide range of applications, high efficiency, and low impedance make it an ideal choice for many projects. It is a perfect choice for radio frequency and power applications, and its robust design ensures that it will provide reliable service for many years to come.
The specific data is subject to PDF, and the above content is for reference
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