IRLU7843-701PBF

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IRLU7843-701PBF is a power MOSFET (based on the P-Channel MOSFET technology) from the IRLU7800 series, which is introduced by the Infineon Technologies. It is a single-channel device, standard for TO-252 packages and has a drain current (ID) limit of 7A which is equivalent to a 400V power channel with a drain source voltage (VDS) of 41V max. With this MOSFET, the user can easily adjust the resistance and power levels. Its brief features can also be explained as follows:

• 100% avalanche rated
• Low on-resistance
• Low input capacitance
• High dV/dt capability
• Low gate driving power

IRLU7843-701PBF application field and working principle

The IRLU7843-701PBF is mainly used for power supply management, high frequency switch mode power supply (SMPS) applications and power management. It is a high performance power device, with a low gate threshold voltage of 3.2V and low on-resistance of 0.224Ω. The device has a maximum drain source breakdown voltage (V(BR)DSS) of −99V and a gate source voltage (VGS) of −10.5V.

The IRLU7843-701PBF power MOSFET works differently with different gate source voltages. When the gate-source voltage is −6V, the device works as an enhancement-mode device. This means that the resistance between the source and the drain is just increased by the application of the gate-source voltage. That is to say, the total power dissipation is thermal characteristics. The power dissipation of the device depends on drain-source voltage and drain current and it can be calculated by the following equation: P=V (DSS)²/R(DSS) where V(DSS) is the maximum drain-source voltage and R(DSS) is the maximum drain-source on-state resistance.

When the gate-source voltage is 0V, the device works in a depletion-mode. In this mode, the total power dissipation is mainly determined by the maximum drain current (ID) and the total capacitance. These capacitances, including input capacitance and output capacitance, contribute the internal dynamic losses. So, it can be assumed that, when the total capacitance is low and the maximum drain current (ID) is large, the total power dissipation is larger, and vice versa. The total dynamic power dissipation can be calculated by the following equation: P=IDC (C+C)² where C is the total output capacitance and C, is the total input capacitance.

IRLU7843-701PBF offer a wide range of operating temperature ranges, from -55°C to +150°C. The device is suitable for use in many severe environments, such as automotive and industrial applications. Its price is also reasonable, starting from 0.22 USD per piece.

In conclusion, the IRLU7843-701PBF is an ideal solution for power management, high frequency switch mode power supply (SMPS) applications and power management. This MOSFET with its low on-resistance and low gate driving power, makes it highly suitable for these applications. It also offers a wide range of temperature operating range. All in all, this device is an excellent choice for cost effective, high performance solutions.

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