Allicdata Part #: | BSP324L6327HTSA1TR-ND |
Manufacturer Part#: |
BSP324L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 400V 170MA SOT-223 |
More Detail: | N-Channel 400V 170mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP324L6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 154pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
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The BSP324L6327HTSA1 is a P-Channel Enhancement Mode Field Effect Transistor (FET) specially designed for use in mid- to high-power switching applications. It is a single-source, vertical channel P-Channel FET that is used for switching high-current DC and AC loads. The BSP324L6327HTSA1 is a high-voltage MOSFET that delivers high performance with low on-resistance. This FET also offers high-frequency switching capability and can be used to switch currents up to 30A.
In an application, the BSP324L6327HTSA1 is used to switch high-current DC or AC loads. Since it is an MOSFET, it does not require a current path for operation, making it ideal for environments where power is limited or where switch control is necessary. The BSP324L6327HTSA1 is often used in commutation circuits and can be used in a wide range of applications such as medical instrumentation, test equipment, LCD or LED lighting, automotive, industrial motor control, and power supplies.
The BSP324L6327HTSA1 operates on the principles of electrostatics. A metal oxide semiconductor (MOS) is used to control the voltage and current across a channel of the device. MOSFETs are voltage-controlled FETs, meaning that the voltage applied to the gate (VG) of the FET determines the drain-source resistance (RDS).
The BSP324L6327HTSA1 has a low RDSon of only 0.63mΩ. This low RDSon allows for low power dissipation and high efficiency regardless of the heat source. The BSP324L6327HTSA1 also has a low gate-source capacitance of 4.4nF, allowing for fast switching speeds. The transistor also has a breakdown voltage of 30V, which is higher than standard MOSFETs and allows it to be used in higher voltage applications.
The BSP324L6327HTSA1 is a versatile and reliable MOSFET for high-current DC and AC load switching. Its low on-resistance and high breakdown voltage make it suitable for a variety of applications. It is capable of switching high currents and is suitable for use in high-temperature and harsh environments.
The specific data is subject to PDF, and the above content is for reference
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