Infineon decoder interface - Allicdata Electronics

Related Categories

< 210 211 212 213 214 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRF7477PBF-ND	IRF7477PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
SPI16N50C3HKSA1 -ND	SPI16N50C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 675A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
XC2336B40F80LAA FXUMA1-ND	XC2336B40F80LAA FXUMA1	Infineon Technologies	View more Series: XC23xxB Part Status: Obsolete Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 80MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 38 Program Memory Size: 320KB (320K x 8) Program Memory Type: FLASH RAM Size: 34K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 9x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
TC277T64F200SDC KXUMA1-ND	TC277T64F200SDC KXUMA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
XC2080M104F80LA BKXUMA1-ND	XC2080M104F80LA BKXUMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
XC2286M104F66LA BHXUMA1-ND	XC2286M104F66LA BHXUMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
V501445SHPSA1-N D	V501445SHPSA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $26.7498
TD142N16KOFHPSA 1-ND	TD142N16KOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 142A Current - On State (It (RMS)) (Max): 230A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	8+: $75.2682
IPA50R500CEIN-N D	IPA50R500CE	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	1000 Order	--
TD251N14KOFHPSA 1-ND	TD251N14KOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 250A Current - On State (It (RMS)) (Max): 410A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	3+: $89.7078
SPD07N60C3-ND	SPD07N60C3	Infineon Technologies	View more Series: CoolMOS Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 350A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	31964 Order	--
BAW56SH6727XTSA 1TR-ND	BAW56SH6727XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 2 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BAW56S	1000 Order	15000+: $0.0372
IDC08D120T6MX1S A2-ND	IDC08D120T6MX1S A2	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 2.7A @ 1200V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40C ~ 175C	1000 Order	1+: $0.9954
IDH12SG60CXKSA2 -ND	IDH12SG60CXKSA2	Infineon Technologies	View more Series: CoolSiC Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100A @ 600V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55C ~ 175C	1000 Order	500+: $2.905
D251N12BXPSA1-N D	D251N12BXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 255A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 30mA @ 1200V Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Operating Temperature - Junction: -40C ~ 180C	1000 Order	1+: $0
D711N65TXPSA1-N D	D711N65TXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6500V Current - Average Rectified (Io): 1070A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50mA @ 6500V Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Operating Temperature - Junction: -40C ~ 160C	1000 Order	1+: $299.628
IDW15S120FKSA1- ND	IDW15S120FKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 305A @ 1200V Capacitance @ Vr, F: 870pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
D1481N60TXPSA1- ND	D1481N60TXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6000V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2500A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50mA @ 6000V Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK Operating Temperature - Junction: -40C ~ 160C	1000 Order	1+: $0
IRAUIRFU8401-ND	AUIRFU8401	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.9V @ 500A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	3000+: $0.5012
IRLU2905PBF-ND	IRLU2905PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	3000+: $0.4704
IPP65R600C6XKSA 1-ND	IPP65R600C6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
AUIRF7734M2TR-N D	AUIRF7734M2TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2545pF @ 25V Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET M2 Package / Case: DirectFET Isometric M2	1000 Order	4800+: $0.6575
IPI530N15N3GXKS A1-ND	IPI530N15N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 35A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $0.6646
IRAUIRFB8405-ND	AUIRFB8405	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V Power Dissipation (Max): 163W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IPI60R199CPXKSA 1-ND	IPI60R199CPXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 660A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Power Dissipation (Max): 139W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $1.5597
SIPC69N65C3X1SA 1-ND	SIPC69N65C3X1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1719+: $4.5799
IPA65R045C7XKSA 1-ND	IPA65R045C7XKSA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	500+: $5.4922
6MS24017P43W416 46NOSA1-ND	6MS24017P43W416 46NOSA1	Infineon Technologies	View more Series: ModSTACK 3 Part Status: Active Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Input: Standard NTC Thermistor: Yes Operating Temperature: -25C ~ 55C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $15.75
IHW20N120R5XKSA 1-ND	IHW20N120R5XKSA 1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A Power - Max: 288W Switching Energy: 750J (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25C: -/260ns Test Condition: 600V, 20A, 10 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	1+: $0
DD1200S12H4HOSA 1-ND	DD1200S12H4HOSA 1	Infineon Technologies	View more Part Status: Active Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 1200A Power - Max: 1200000W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $409.147
BF2040E6814HTSA 1TR-ND	BF2040E6814HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: N-Channel Frequency: 800MHz Gain: 23dB Voltage - Test: 5V Current Rating: 40mA Noise Figure: 1.6dB Current - Test: 15mA Voltage - Rated: 8V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BF2040	15000 Order	3000+: $0.0631 6000+: $0.0595 15000+: $0.0543 30000+: $0.0508 75000+: $0.0455
IRF7902TRPBFTR- ND	IRF7902TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.4A, 9.7A Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25A Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7902PBF	4000 Order	--
PXFC193808SVV1R 250XTMA1-ND	PXFC193808SVV1R 250XTMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	250+: $93.6089
BF5020E6327-ND	BF 5020 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: N-Channel Frequency: 800MHz Gain: 26dB Voltage - Test: 5V Current Rating: 25mA Noise Figure: 1.2dB Current - Test: 10mA Voltage - Rated: 8V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BF5020	1000 Order	1+: $0
BSP316PL6327HTS A1TR-ND	BSP316PL6327HTS A1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V Vgs(th) (Max) @ Id: 2V @ 170A Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
DT61N12KOFHPSA1 -ND	DT61N12KOFHPSA1	Infineon Technologies	View more Part Status: Active	1000 Order	15+: $50.6423
IRF2903ZLPBF-ND	IRF2903ZLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V Power Dissipation (Max): 231W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRLR3715ZCTRLPC T-ND	IRLR3715ZCTRLP	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TT61N16KOFHPSA1 -ND	TT61N16KOFHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 76A Current - On State (It (RMS)) (Max): 120A Voltage - Gate Trigger (Vgt) (Max): 1.4V Current - Gate Trigger (Igt) (Max): 120mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	15+: $55.1107
IRFSL4615PBF-ND	IRFSL4615PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0

< 210 211 212 213 214 >

Hot Searches: infineon decoder interface on decoder interface infineon encoder interface infineon converter interface adsantec decoder interface analog decoder interface akm decoder interface broadcom decoder interface burr decoder interface cirrus decoder interface conexant decoder interface cypress decoder interface fairchild decoder interface freescale decoder interface kinnum decoder interface harris decoder interface holtek decoder interface intersil decoder interface lantic decoder interface linx decoder interface

Search Result:infineon decoder interface

Related Categories