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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRDC2085S-S-ND	IRDC2085S-S	Infineon Technologies	View more Part Status: Obsolete Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated Power - Output: 200W Voltage - Output: 6 V ~ 10 V Current - Output: 20A Voltage - Input: 36 V ~ 60 V Regulator Topology: Buck Frequency - Switching: 500kHz Board Type: Fully Populated Supplied Contents: Board(s) Utilized IC / Part: IR2085S, IRF7493, IRF7832	1000 Order	1+: $0
ESD102U405LE632 7XTSA1TR-ND	ESD102U405LE632 7XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 3.3V (Max) Voltage - Breakdown (Min): 6.2V (Typ) Power - Peak Pulse: 28W Power Line Protection: No Applications: Ethernet, HDMI Capacitance @ Frequency: 0.035pF @ 1MHz Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 5-XFLGA Supplier Device Package: TSLP-5-2	1000 Order	15000+: $0.0777 30000+: $0.0714
TD150N24KOFHPSA 1-ND	TD150N24KOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2.6kV Current - On State (It (AV)) (Max): 223A Current - On State (It (RMS)) (Max): 350A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	3+: $113.719
ESD112B102ELSE6 327XTSA1TR-ND	ESD112B102ELSE6 327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.3V (Max) Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Current - Peak Pulse (10/1000s): 3A (8/20s) Power Line Protection: No Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: TSSLP-2-4	1000 Order	1+: $0
BGA420H6327XTSA 1TR-ND	BGA420H6327XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Frequency: 0Hz ~ 3GHz P1dB: -2.5dBm Gain: 13dB Noise Figure: 2.3dB RF Type: General Purpose Voltage - Supply: 3 V ~ 6 V Current - Supply: 6.7mA Test Frequency: 1GHz Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	15000 Order	3000+: $0.2022 6000+: $0.1921 15000+: $0.1842 30000+: $0.1791
PVI5013RPBF-ND	PVI5013RPBF	Infineon Technologies	View more Series: PVI Packaging: Tube Part Status: Active Number of Channels: 2 Voltage - Isolation: 3750Vrms Turn On / Turn Off Time (Typ): 5ms, 250s (Max) Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 8V Current - Output / Channel: 1A Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1988 Order	--
FZ600R17KE3HOSA 1-ND	FZ600R17KE3HOSA 1	Infineon Technologies	View more Series: * Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 840A Power - Max: 3150W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 54nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $111.718
FP25R12KT4B16BO SA1-ND	FP25R12KT4B16BO SA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	10+: $50.4794
BSS138WH6327XTS A1TR-ND	BSS138WH6327XTS A1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	72000 Order	--
IFS200V12PT4BOS A1-ND	IFS200V12PT4BOS A1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Input: Standard NTC Thermistor: Yes Operating Temperature: 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	6+: $293.389
2PS13512E43W352 22NOSA1-ND	2PS13512E43W352 22NOSA1	Infineon Technologies	View more Series: PrimeSTACK Part Status: Active Configuration: Three Phase Inverter Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 450A Input: Standard NTC Thermistor: Yes Operating Temperature: -25C ~ 55C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $3.15
IPD50P04P413ATM A1TR-ND	IPD50P04P413ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 85A Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 25V Power Dissipation (Max): 58W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
IRF7103PBF-ND	IRF7103PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7103PBF	1533 Order	--
IRFP90N20DPBF-N D	IRFP90N20DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V Power Dissipation (Max): 580W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	660 Order	--
PTFA210601EV4XW SA1-ND	PTFA210601EV4XW SA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.14GHz Gain: 16dB Voltage - Test: 28V Current Rating: 10A Current - Test: 550mA Power - Output: 12W Voltage - Rated: 65V Package / Case: H-36265-2 Supplier Device Package: H-36265-2 Base Part Number: PTFA210601	1000 Order	1+: $0
PTFA212001F/1P4 -ND	PTFA212001F/1 P 4	Infineon Technologies	View more Packaging: Tray Part Status: Discontinued at Digi-Key Transistor Type: LDMOS Frequency: 2.14GHz Gain: 15.8dB Voltage - Test: 30V Current Rating: 10A Current - Test: 1.6A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2 Base Part Number: PTFA212001	1000 Order	1+: $0
PTFA192001E1V4X WSA1-ND	PTFA192001E1V4X WSA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 1.99GHz Gain: 15.9dB Voltage - Test: 30V Current - Test: 1.8A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36260-2	1000 Order	1+: $0
IRFU9024NPBF-ND	IRFU9024NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	5912 Order	--
BCR148E6393HTSA 1-ND	BCR148E6393HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	1+: $0
IGCM15F60HAXKMA 1-ND	IGCM15F60HAXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Current: 15A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	1000 Order	280+: $5.1455
IRAM538-1065A-N D	IRAM538-1065A	Infineon Technologies	View more Part Status: Not For New Designs Type: IGBT Configuration: 3 Phase Current: 10A Voltage: 600V	1000 Order	--
IRG4PC40WPBF-ND	IRG4PC40WPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 160W Switching Energy: 110J (on), 230J (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25C: 27ns/100ns Test Condition: 480V, 20A, 10 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	706 Order	--
IKW15N120H3FKSA 1-ND	IKW15N120H3FKSA 1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 217W Switching Energy: 1.55mJ Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25C: 21ns/260ns Test Condition: 600V, 15A, 35 Ohm, 15V Reverse Recovery Time (trr): 260ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	469 Order	1+: $3.339 10+: $2.9994 100+: $2.4573 500+: $2.0919 1000+: $1.7642
IHW40N60RFFKSA1 -ND	IHW40N60RFFKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 305W Switching Energy: 560J (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25C: -/175ns Test Condition: 400V, 40A, 5.6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	402 Order	1+: $2.9043 10+: $2.6076 100+: $2.1363 500+: $1.8185 1000+: $1.5337
IPW50R140CPFKSA 1-ND	IPW50R140CPFKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.5V @ 930A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V Power Dissipation (Max): 192W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	238 Order	1+: $3.843 10+: $3.4297 240+: $2.8126 720+: $2.2775 1200+: $1.9208
IKP15N65F5XKSA1 -ND	IKP15N65F5XKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 105W Switching Energy: 130J (on), 40J (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25C: 17ns/150ns Test Condition: 400V, 7.5A, 39 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	30 Order	1+: $1.4301 10+: $1.2821 100+: $1.0304 500+: $0.8466 1000+: $0.7014
IRLR8726PBF-ND	IRLR8726PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Power Dissipation (Max): 75W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	3006 Order	--
BSP51H6327XTSA1 -ND	BSP51H6327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Base Part Number: BSP51	1000 Order	5000+: $0.0946
IRLR8729TRPBFTR -ND	IRLR8729TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Power Dissipation (Max): 55W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SPP08P06PHXKSA1 -ND	SPP08P06PHXKSA1	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	388 Order	1+: $0.7119 10+: $0.6287 100+: $0.497 500+: $0.3854 1000+: $0.3043
IPP80R360P7XKSA 1-ND	IPP80R360P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V Power Dissipation (Max): 84W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	384 Order	1+: $1.8774 10+: $1.6941 100+: $1.3615 500+: $1.0589 1000+: $0.8774
BC850BWE6327HTS A1TR-ND	BC850BWE6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BC850	1000 Order	1+: $0
IRL530NSTRLPBFT R-ND	IRL530NSTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
BSC097N06NSATMA 1TR-ND	BSC097N06NSATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.3V @ 14A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.2409
BC817K40WE6327H TSA1TR-ND	BC817K40WE6327H TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BC817	1000 Order	1+: $0
IRLZ34NPBF-ND	IRLZ34NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	30442 Order	--
AUIRFSA8409-7P- ND	AUIRFSA8409-7P	Infineon Technologies	View more Series: Automotive, AEC-Q101, HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 523A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.69 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab)	1400 Order	--
IRF6726MTRPBFTR -ND	IRF6726MTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150A Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MT Package / Case: DirectFET Isometric MT	1000 Order	--
IPD70N10S312ATM A1TR-ND	IPD70N10S312ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.509
BSD316SNH6327XT SA1-ND	BSD316SNH6327XT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT363-6 Package / Case: 6-VSSOP, SC-88, SOT-363	1000 Order	9000+: $0.0585

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