Allicdata Part #: | IPI530N15N3GXKSA1-ND |
Manufacturer Part#: |
IPI530N15N3GXKSA1 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 21A TO262-3 |
More Detail: | N-Channel 150V 21A (Tc) 68W (Tc) Through Hole PG-T... |
DataSheet: | IPI530N15N3GXKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.66460 |
Vgs(th) (Max) @ Id: | 4V @ 35µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 887pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPI530N15N3GXKSA1 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is also known as a Single-Gate FET (SG-FET). This MOSFET is part of a family of high-power MOSFETs designed for use in a wide variety of applications including power conversion, motor control and motor drive systems.
MOSFETs differ from other types of transistors because they use a gate instead of a base in order to control the flow of current. The gate is usually insulated from the other terminals, and the voltage across the gate controls its conductivity. This makes the MOSFET an ideal choice for switching applications because it allows very high speed operation as well as high input impedance.
The IPI530N15N3GXKSA1 is a N-Channel MOSFET with a maximum drain-source voltage of 150 volts (Vds), a maximum drain current (Id) of 150 amps, and a maximum power dissipation (PD) of 530 watts. It is also capable of operating at up to 85° degrees Celsius (C), and is also RoHS compliant. The device is protected against short circuit, overload, and over temperature conditions, making it well suited for applications operating in industrial and automotive environments.
The IPI530N15N3GXKSA1 is primarily used in power switching applications, where it is capable of controlling high current and power switches. It is also used in motor control systems, where its high power capabilities make it a preferred choice over other types of transistors. The device can also be used in applications where fast switching speeds are required, such as in inverters or power supplies.
The working principle of the IPI530N15N3GXKSA1 can be described as follows. When the gate voltage is sufficiently large, the MOSFET will turn “on” and allow current to flow from the drain to the source terminals. When the gate voltage is decreased, current flow from drain to source will drastically decrease until it eventually shuts off. This makes the MOSFET an ideal choice for controlling current in applications such as power switching and motor control systems.
The IPI530N15N3GXKSA1 is suitable for applications where high power and speed of switching are required. It can be used in a wide range of applications, including motor control, power conversion, and power supplies. With its protection features and wide working temperature range, it is a reliable and reliable to use in industrial and automotive environments.
The specific data is subject to PDF, and the above content is for reference
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