BSP316PL6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSP316PL6327HTSA1TR-ND |
Manufacturer Part#: |
BSP316PL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 0.68A SOT-223 |
More Detail: | P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP316PL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 170µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 146pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 680mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 680mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP 316PL6327HTSA1 is a single P-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) device. It is the latest generation of MOSFETs from Vishay Intertechnology, designed to provide high-performance, low-voltage operation for applications under 500 mV. The low-voltage application is made possible through an innovative process technology that reduces the power consumption of the device and its associated gate (input) capacitance.
The BSP 316PL6327HTSA1 device has a wide range of applications in industrial, telecommunications, consumer and automotive markets. It is suitable for switching applications where low on-resistance, low capacitance and low power consumption are required. It can also be used in low-voltage applications such as DC-DC converters, power supply systems and power accelerators.
The BSP 316PL6327HTSA1 is an Enhancement-mode MOSFET which means that the device can be turned on or off by a signal applied to the gate. This signal is amplified by the channel between the source and the drain. When the signal applied to the gate is high, the channel is turned on and current can flow between the source and the drain and the device is said to be in an “On” state. When the signal applied to the gate is low, the channel is turned off, and no current can flow, and the device is said to be in an “Off” state.
The BSP 316PL6327HTSA1 device has a maximum voltage rating of 63V and a maximum current of 32 Amps with a low “On” resistance of 316mΩ. The low-power, low-voltage characteristics of this device enable it to be used in a variety of applications, including DC-DC converters, power conditioners, power accelerators, low-voltage applications and high-side switching applications.
The BSP 316PL6327HTSA1 device has a maximum power dissipation of 8.0 Watts. It operates at a maximum temperature of 25°C, and has a maximum transistor gate capacitance of 5.2nF. In addition, the device has an operational frequency range of 0.1GHz to 1.0GHz and an operating temperature range of -55°C to 150°C.
The BSP 316PL6327HTSA1 device is ideal for a variety of applications requiring low on-resistance, low capacitance, and low power consumption. It is especially suitable for DC-DC converters, power conditioner systems, power accelerators, low-voltage applications, and high-side switching applications. Its wide operating temperature range, low power dissipation, and high current capability make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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