IPA50R500CE

Vgs(th) (Max) @ Id:	3.5V @ 200µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	PG-TO220FP
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	28W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	433pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18.7nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	500 mOhm @ 2.3A, 13V
Drive Voltage (Max Rds On, Min Rds On):	13V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPA50R500CE Application Field and Working PrincipleAn IPA50R500CE is used in many applications as a radio frequency (RF) power amplifier. It is a single discrete type transistor used in many consumer electronic devices, such as satellite and terrestrial television, FM radio, wireless communications, and wireless data transmission systems. The transistor is manufactured by Infineon, a German semiconductor company.The IPA50R500CE is part of the Infineon eXcellentTM family of transistors and is a bipolar junction transistor (BJT). It has a low frequency (LF) range of up to 2.0 GHz, a high frequency (HF) range of up to 5.0 GHz and a power rating of 500 watts. The device is ideal for high power applications, providing high gain and gain-flatness.The principle of operation for the IPA50R500CE is that it operates in the BJT Amplification Mode. This is a type of amplifier circuit in which a collector transistor is used to control the current gain of a transistor. The biasing current is applied to the base of the transistor and the voltage applied to the collector is controlled to ensure that the current gain of the transistor is well defined. The transistor acts as an amplifier with the current gain depending on the ratio of the base and collector currents.The IPA50R500CE is suitable for use in radio transmitters and radio frequency amplifiers that require a high frequency, wide dynamic range and high power requirements. It is ideal for use in RF power amplifier designs for consumer electronics, such as TV and radio broadcasts. The transistor can also be used for other applications such as SSB/CW modems, microwave links and cable TV modems.In addition, the IPA50R500CE offers excellent linearity and high power output levels. This makes it ideal for RF applications that require a high power output and low distortion levels. The transistor also has a low noise figure and can be used in low noise amplifier designs.The IPA50R500CE is a versatile transistor that is suitable for a wide range of applications. It is ideal for high power designs and is an ideal choice for radio and television broadcast applications. The transistor has excellent linearity, high power output levels and low noise figures, making it an excellent choice for RF power amplifiers.

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