SPI16N50C3HKSA1

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The SPI16N50C3HKSA1 is a Silicon N-channel power MOSFET that offers improved efficiency and compact size in applications, allowing designers to create more efficient designs which help reduce power consumption. This device is suitable for high-frequency switching applications, including DC/DC converters, DC/AC inverters, and other power switching applications.

The SPI16N50C3HKSA1 is designed with N-type MOSFET technology and has an extremely low on-resistance of 16 mOhms. This low resistance helps reduce power loss, resulting in improved efficiency and higher power transfer capability. The device also has a drain-source voltage rating of 500 V and a peak drain current of 200 A. In addition, the SPI16N50C3HKSA1 has a maximum gate-source voltage of 25 V and a maximum gate-drain voltage rating of 20 V.

The SPI16N50C3HKSA1 is typically used in high-frequency switching applications, such as DC/DC converters and DC/AC inverters. The device is well-suited for switching applications such as Variable Frequency Drives (VFDs), soft starters, motor control, and variable voltage power supplies. The device also has a low input capacitance of 945 pF, which helps to reduce the switching losses in high-frequency applications. The SPI16N50C3HKSA1 is also well-suited for use as a logic-level controlled switch in low power applications.

The SPI16N50C3HKSA1 uses an N-channel Power MOSFET, which is a type of FET (Field Effect Transistor) that uses an electric field to control the current flow between the source and drain. The electric field is generated by applying a voltage to the gate terminal of the device, which causes the current to flow from the source to the drain. This is known as the “gate effect”. The device has an extremely low on-resistance of 16 mOhms which helps reduce power loss, resulting in improved efficiency and higher power transfer capability.

The device has a maximum drain-source voltage rating of 500 V and a peak drain current of 200 A. It also has a low input capacitance of 945 pF, which helps to reduce the switching losses in high-frequency applications. The device has a maximum gate-source voltage of 25 V and a maximum gate-drain voltage rating of 20 V.

In summary, the SPI16N50C3HKSA1 is a low on-resistance Silicon N-channel MOSFET that is suitable for high-frequency switching applications such as DC/DC converters, DC/AC inverters, and motor control. It has a drain-source voltage rating of 500 V and a peak drain current of 200 A and has a low input capacitance of 945 pF which helps reduce switching losses. The device has a maximum gate-source voltage of 25 V and a maximum gate-drain voltage rating of 20 V, making it a viable option for low power applications.

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