Infineon interface controllers - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRF1405ZSTRL-7P -ND	IRF1405ZSTRL-7P	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1+: $0
BBY5702VE6327-N D	BBY 57-02V E632 7	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio: 4.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Base Part Number: BBY57	1000 Order	1+: $0
IRLR3715TRLPBF- ND	IRLR3715TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
BSS126E6906-ND	BSS126 E6906	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 8A Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IPP070N06NGIN-N D	IPP070N06N G	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 180A Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	--
BAT6806WH6327XT SA1TR-ND	BAT6806WH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky - 1 Pair Common Anode Voltage - Peak Reverse (Max): 8V Current - Max: 130mA Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10 Ohm @ 5mA, 10kHz Power Dissipation (Max): 150mW Operating Temperature: 150C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BAT68-06	1000 Order	1+: $0
IPP100P03P3L-04 -ND	IPP100P03P3L-04	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.1V @ 475A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 9300pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
IPP16CN10LGXKSA 1-ND	IPP16CN10LGXKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V Vgs(th) (Max) @ Id: 2.4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4190pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPD90N06S405ATM A1TR-ND	IPD90N06S405ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 60A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF3707ZCSTRRPT R-ND	IRF3707ZCSTRRP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Power Dissipation (Max): 57W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF7494TRPBFTR- ND	IRF7494TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
TDB6HK180N16RRB OSA1-ND	TDB6HK180N16RRB OSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	10+: $69.2515
BSP320SL6327HTS A1TR-ND	BSP320SL6327HTS A1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 20A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
IRF1902GTRPBF-N D	IRF1902GTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
AUIRFP2602-ND	AUIRFP2602	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11220pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	1000 Order	1+: $0
IRFS7437-7PPBF- ND	IRFS7437-7PPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150A Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V Power Dissipation (Max): 231W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	--
SPI11N60C3HKSA1 -ND	SPI11N60C3HKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3.9V @ 500A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
BAS7006E6433HTM A1TR-ND	BAS7006E6433HTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io) (per Diode): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal = Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BAS70-06	1000 Order	30000+: $0.0366
BAV70UE6327HTSA 1TR-ND	BAV70UE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 2 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	1000 Order	15000+: $0.0402
ASP1000C-16T-ND	ASP1000C-16T	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	--
ASP1000C-I41T-N D	ASP1000C-I41T	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
XMC1202T016X001 6ABXUMA1-ND	XMC1202T016X001 6ABXUMA1	Infineon Technologies	View more Series: XMC1000 Packaging: Tape & Reel (TR) Part Status: Active Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: IC, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, IS, POR, PWM, WDT Number of I/O: 11 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 11x12b Oscillator Type: Internal Operating Temperature: -40C ~ 105C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-16-8	1000 Order	3000+: $0.4731
PVI5013RS-TPBF- ND	PVI5013RS-TPBF	Infineon Technologies	View more Series: PVI Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 2 Voltage - Isolation: 3750Vrms Turn On / Turn Off Time (Typ): 5ms, 250s (Max) Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 8V Current - Output / Channel: 1A Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD	1000 Order	750+: $2.1884
PVI5013R-ND	PVI5013R	Infineon Technologies	View more Series: PVI Packaging: Tube Part Status: Obsolete Number of Channels: 2 Voltage - Isolation: 3750Vrms Turn On / Turn Off Time (Typ): 5ms, 250s (Max) Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 8V Current - Output / Channel: 1A Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	1+: $0
IRS2982STRPBFTR -ND	IRS2982STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Type: AC DC Offline Switcher Topology: Flyback Internal Switch(s): No Number of Outputs: 1 Voltage - Supply (Min): 11.5V Voltage - Supply (Max): 18V Frequency: 320kHz Operating Temperature: -25C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	1000 Order	--
XC2269I136F128L AAKXUMA1-ND	XC2269I136F128L AAKXUMA1	Infineon Technologies	View more Series: XC22xxI Part Status: Obsolete Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 128MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, IS, POR, PWM, WDT Number of I/O: 76 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH RAM Size: 90K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA)	1000 Order	1+: $0
XE167FM72F80LAA KXQMA1-ND	XE167FM72F80LAA KXQMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
TLE49421CBAMA1T B-ND	TLE49421CBAMA1	Infineon Technologies	View more Series: TLE Packaging: Tape & Box (TB) Part Status: Active Function: Special Purpose Technology: Hall Effect Voltage - Supply: 4.5 V ~ 20 V Current - Supply (Max): 16.8mA Output Type: Current Source Package / Case: 2-SIP, SSO-2-2 Supplier Device Package: P-SSO-2-2	1000 Order	1500+: $1.427
TLE4928HALA1TB- ND	TLE4928HALA1	Infineon Technologies	View more Series: TLE Packaging: Tape & Box (TB) Part Status: Active Function: Special Purpose Technology: Hall Effect Package / Case: 3-SIP, SSO-3-09 Supplier Device Package: SSO-3	1000 Order	2000+: $1.4618
TLE5012BDE9200X UMA1-ND	TLE5012BDE9200X UMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	2500+: $2.9391
BGSX22GN10E6327 XTSA1TR-ND	BGSX22GN10E6327 XTSA1	Infineon Technologies	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 10-XFQFN Supplier Device Package: PG-TSNP-10-1	1000 Order	7500+: $0.1914
TLE4984CXAAF47X AMA1-ND	TLE4984CXAAF47X AMA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1500+: $1.7426
PTFA071701FV4XW SA1-ND	PTFA071701FV4XW SA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 765MHz Gain: 18.7dB Voltage - Test: 30V Current - Test: 900mA Power - Output: 150W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37248-2 Base Part Number: PTFA071701	1000 Order	1+: $0
IRF2804SPBF-ND	IRF2804SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1062 Order	--
BSC320N20NS3GAT MA1TR-ND	BSC320N20NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	--
IPP80R1K4P7XKSA 1-ND	IPP80R1K4P7XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	995 Order	1+: $0.9513 10+: $0.8448 100+: $0.6676 500+: $0.5177 1000+: $0.4087
IPP12CN10LGXKSA 1-ND	IPP12CN10LGXKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 69A, 10V Vgs(th) (Max) @ Id: 2.4V @ 83A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 50V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	373 Order	1+: $1.2789 10+: $1.1542 100+: $0.9274 500+: $0.7213 1000+: $0.5976
BC808-40B6327-N D	BC 808-40 B6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC808	1000 Order	1+: $0
BCW66HB6327-ND	BCW 66H B6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCW66	1000 Order	1+: $0
IRG4BC20UDSTRRP -ND	IRG4BC20UDSTRRP	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 160J (on), 130J (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25C: 39ns/93ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	800+: $1.713

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