IRF7494TRPBF Allicdata Electronics
Allicdata Part #:

IRF7494TRPBFTR-ND

Manufacturer Part#:

IRF7494TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 5.1A 8-SOIC
More Detail: N-Channel 150V 5.1A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7494TRPBF datasheetIRF7494TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7494TRPBF is a single field effect transistor (FET) designed for direct current (DC) applications. It is commonly used for controlling hot-swapping, eliminating high inrush surges. The IRF7494TRPBF is a standard MOSFET with a Drain-Source voltage rating of ±30V and a Maximum Drain-Source voltage rating of ±60V. It is also able to support current ratings of up to 1.3A.

The IRF7494TRPBF is a very versatile device as it is capable of operating in both enhancement and depletion modes. On the drain side, the device\'s Gate voltage must be increased in order to turn it on, a process that requires voltage be applied to the Gate side. On the source side, the Gate voltage must be decreased to turn it off, requiring the Gate voltage be removed.

When the IRF7494TRPBF operating in enhancement mode, the FET is turned on when a positive voltage is applied to the Gate. This positive voltage will cause a buildup of electrons in the substrate, producing a field in the substrate that is used for controlling the resistance of the body-drain. As the voltage on the Gate is increased, the resistance offered by the FET is reduced allowing current to flow from source to drain.

When operating in depletion mode, the FET is turned off when a negative voltage is applied to the Gate. The negative voltage creates an opposite field that "depletes", or reduces, the electrons in the substrate, increasing the resistance which in turn prevents current flow.

The IRF7494TRPBF is a versatile device that can be used in a variety of applications. It is often used to control the current through an inductive load, such as a DC motor or a fan, or to provide additional protection against inrush current in a system. The device can also be used as a switch to control the flow of current in an application.

In order to use the IRF7494TRPBF in an application, its drain-source voltage rating and maximum drain-source voltage rating must be taken into account. It is also important to consider the gate voltage requirements for operating the device in either enhancement or depletion modes. However, when used properly, the IRF7494TRPBF can be a valuable addition to any system.

The specific data is subject to PDF, and the above content is for reference

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