IPD90N06S405ATMA1 Allicdata Electronics
Allicdata Part #:

IPD90N06S405ATMA1TR-ND

Manufacturer Part#:

IPD90N06S405ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 90A TO252-3
More Detail: N-Channel 60V 90A (Tc) 107W (Tc) Surface Mount PG-...
DataSheet: IPD90N06S405ATMA1 datasheetIPD90N06S405ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 60µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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IPD90N06S405ATMA1 is a type of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) mainly used in switch mode power supply and various other power management applications. It is a type of field-effect transistor, which uses a channel of vertically etched silicon to control the flow of electrons between the source and the drain and is one of the most efficient types of transistors available. It is constructed in a standard plastic SMT (Surface Mount Technology) package.

The IPD90N06S405ATMA1 MOSFET is a versatile device and has a variety of uses. It is mainly used in the switch mode power supply and other power management applications. It consists of an N-channel power MOSFET with the following features:

  • Low on-resistance
  • Low gate charge
  • Low input capacitance
  • High-speed switching
  • High-frequency operation
  • High input impedance
  • Enhanced noise immunity

Furthermore, it can be used in high-speed switching, battery-less lighting, motor control, and other DC power management applications. It is also well-suited for low-power applications such as frequency converters and pulse motor drivers.

The working principle of IPD90N06S405ATMA1 is based on the MOSFET principle. A metal oxide semiconductor is used to control the current flow between the source and drain of the device. The source and drain are resistive materials that provide a path for the electrons to travel from the source to the drain. The metal oxide gate controls the current flow between the source and the drain by allowing or preventing the flow of electrons depending on the applied voltage. A small amount of voltage applied to the metal oxide gate will greatly change the resistance of the channel. As a result, the current flow between the source and drain can be controlled by varying the voltage applied to the gate.

The IPD90N06S405ATMA1 MOSFET is a rugged device and can handle large voltage fluctuations without damage. It comes in a standard plastic SMT (Surface Mount Technology) package. The package is designed to withstand thermal shocks and vibrations and can withstand temperatures ranging from -40°C to 125°C. It is a very efficient device and has a wide range of applications in various industries.

In conclusion, the IPD90N06S405ATMA1 MOSFET is a versatile device that can be used in various power management applications such as switch mode power supply and motor control. Its low input capacitance and high-speed switching capabilities make it a very efficient device. It is constructed in a standard plastic SMT package and is designed to withstand thermal shocks and vibrations. With its wide range of applications and versatility, this device can be used in numerous applications.

The specific data is subject to PDF, and the above content is for reference

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