BSS126 E6906 Allicdata Electronics
Allicdata Part #:

BSS126E6906-ND

Manufacturer Part#:

BSS126 E6906

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 0.021A SOT-23
More Detail: N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ...
DataSheet: BSS126 E6906 datasheetBSS126 E6906 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSS126 E6906 is a small signal MOSFET transistor. It has a small package size and low power consumption, making it a popular choice for many applications that require small size and low power. This article will discuss the application field of BSS126 E6906 and its working principle.

Application Field of BSS126 E6906
BSS126 E6906 is suitable for applications such as power switch and amplifier, because it has a very low gate threshold voltage, low on-resistance and low leakage current. It is used in display panel power switches, DC-DC converters, mobile phones and other lightweight electronic applications, such as remote control applications. It is also used in low-voltage drive circuit, amplifier circuit, high-side driver and low-side switch, PWM-controlled high-side driver, and power supply as well.

Working Principle of BSS126 E6906
BSS126 E6906 is a MOSFET transistor which is made up of a N-channel and a P-channel, both connected in series. When a voltage is applied to the gate, it creates an electric field which attracts the electrons and allows them to flow between the N-channel and P-channel, creating a current. This current remains until the gate voltage is removed.

The N-channel of BSS126 E6906 has a source, drain and gate pin, each of which are connected differently in order to control the current flow. The source and drain pins work together as a diode, allowing current to flow from source to drain when the gate voltage is below a certain level. If the gate voltage is above this level, the N-channel conducts, allowing current to flow from source to drain.

The P-channel of BSS126 E6906 works similarly, but allows the current to flow from drain to source when the gate voltage is above a certain level. If the gate voltage is below this level, the P-channel is off, blocking current flow.

The combination of the N-channel and P-channel creates a MOSFET transistor that can be used to control the current flow. The current flow can be controlled by applying a certain amount of voltage to the gate, which will determine the on and off states of the transistor.

BSS126 E6906 has a low gate threshold voltage, low on-resistance, and low leakage current, making it ideal for applications that require small size and low power.

The specific data is subject to PDF, and the above content is for reference

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