Allicdata Part #: | BSP320SL6327HTSA1TR-ND |
Manufacturer Part#: |
BSP320SL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 2.9A SOT-223 |
More Detail: | N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | BSP320SL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 20µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSP320SL6327HTSA1 is a type of silicon N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for general purpose applications. This device combines the enhanced material-defined gate characteristics of N-channel enhancement mode MOSFETs with a small packages and is well suited for the high frequency switch and different level control application. It has low input capacitance and fast switching speed which can be used in medium power switch applications.
Application field
The application of the BSP320SL6327HTSA1 is mainly in the medium power switch and level control application, which is mainly used in the communication industry, industrial, automotive and consumer electrical equipment.
- Mainly used in the communication industry, as a medium power switch with fast switching speed and low input capacitance.
- Industrial use, such as small DC motor controls, compact solar power systems, invertor controls and power converters.
- Automotive use, such as engine controls, power steering, and airbags.
- Consumer electrical use in HDTV and plasma televisions, digital camera and portable media player.
Working Principle
The BSP320SL6327HTSA1 is a type of N-channel surface-mount MOSFETs, or Metal Oxide Semiconductor Field Effect Transistor, which can be activated or turned on with a small amount of voltage applied to the gate terminal. It is an array of tiny transistors formed on a single chip which can be used for switching or amplification. The MOSFETs MOSFETs uses two principle components an ionized gate and a source and drain. When a voltage is applied to the drain, electrons are attracted to the gate and creates an electrostatic field. This field is used to control the current flow between the drain and the source, which is ultimately used to control the device’s switching behaviour.
The BSP320SL6327HTSA1 is also equipped with special features to ensure maximum reliability in the applications. It has a low on-state resistance, high switching speed and immunity to latch-up. Its total gate charge is rated at 18 nC, making it ideal for high frequency applications. It also has a thermal protection against over-current, over-voltage and short circuit. The package size is small and designed for surface mount technology, making it suitable for low power and high speed applications.
In conclusion, the BSP320SL6327HTSA1 is a type of N-channel enhancement mode MOSFET designed for general purpose applications. Its main application areas include communication, industrial, automotive and consumer electrical equipment. It has low input capacitance and fast switching speed which can be used in medium power switch applications. It is also equipped with special features to ensure maximum reliability in the applications.
The specific data is subject to PDF, and the above content is for reference
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