Allicdata Part #: | IPP100P03P3L-04-ND |
Manufacturer Part#: |
IPP100P03P3L-04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 100A TO220-3 |
More Detail: | P-Channel 30V 100A (Tc) 200W (Tc) Through Hole PG-... |
DataSheet: | IPP100P03P3L-04 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.1V @ 475µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9300pF @ 25V |
Vgs (Max): | +5V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IFP100P03P3L-04 is a single, P-channel MOSFET designed to withstand voltage levels up to 80 volts and currents of up to 8 amperes. Its main features are low on-state resistance, fast switching speed, low gate voltage and low noise. In addition, its switching frequency ranges up to 100kHz, making it suitable for frequency applications. Its integrated gate protection and rugged silicon die-casting construction guarantee reliable performance for applications in a wide array of demanding environments.The main applications of the IFP100P03P3L-04 include motor control circuits, such as on/off switching and pulse-width modulation; overload protection for DC motor drives; and as commutation circuits for AC motor drives. It is also well-suited for power supply applications, such as buck, boost and inverters. The IFP100P03P3L-04 is also used in DC-DC converters, pulse width (PWM) modulation control and general ON/OFF applications.The working principle of the IFP100P03P3L-04 is based on the same fundamental principle as other MOSFETs. It uses an electric field to control the flow of current through its channels. This electric field is created by the voltage applied to the gate of the MOSFET, which polarizes the underlying silicon, creating an “inversion layer” between the source and the drain. This layer is an accumulation of mobile charge carriers of either majority carriers (electrons for n-type MOSFET) or minority carriers (holes for p-type MOSFET). As the voltage applied to the gate of the MOSFET increases, the inversion layer grows in size and creates an increasingly wider path for current to flow through.When the MOSFET is placed in the on-state, strong electric field (polarized silicon) develops between the source and the drain of the MOSFET. This electric field performs an essential role in the switching process because it controls the flow of current from the power rail to the load. The electric field moves currents in one direction only and is thus used to “rectify” alternating currents – it only allows current to flow in one direction. Thus, when the MOSFET is on, the current can flow from the source to the drain; and when the MOSFET is off, the current cannot flow from the drain to the source.The IFP100P03P3L-04 is a single, P-channel MOSFET designed to withstand voltage levels up to 80 volts and currents of up to 8 amperes. Its main features are low on-state resistance, fast switching speed, low gate voltage and low noise. It is used in a variety of applications, including motor control circuits, power supply applications, DC-DC converters, and pulse width modulation control. Its working principle is based on the same fundamental principle as other MOSFETs, using an electric field to control the flow of current in one direction only.
The specific data is subject to PDF, and the above content is for reference
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