JAN1N6117A Circuit Protection |
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Allicdata Part #: | 1086-2186-ND |
Manufacturer Part#: |
JAN1N6117A |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 22.8V 41.6V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6117A Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 9.97633 |
Series: | Military, MIL-PRF-19500/516 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 22.8V |
Voltage - Breakdown (Min): | 28.5V |
Voltage - Clamping (Max) @ Ipp: | 41.6V |
Current - Peak Pulse (10/1000µs): | 12A |
Power - Peak Pulse: | 500W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | Axial |
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The JAN1N6117A TVS Diode is a long-term reliable, low capacitance, BiCMOS ESD protection diode developed by Fairchild Semiconductor. It is used to protect up to two I/O interfaces of high-speed interfaces, such as HDMI, HDMI 1.4, and DisplayPort, against Electro-Static Discharge (ESD) and Electro-Magnetic Interference (EMI) up to 400 Watts. It is a two-channel protective device, providing 3 Amps of ESD protection for both channels without the need of external components. It also includes an ESD-rated integrated transistor and diode, and its low capacitance of 8 pF makes it ideal for use in high-speed applications.
The JAN1N6117A provides very low clamping voltages, which helps to protect vulnerable I/O circuits from damage caused by ESD. The device is designed for ESD protection for up to two I/O ports, with each port individually protected by a positive or negative line. The device also features a low capacitance input with a maximum capacitance of 8pF. The device is also highly tolerant to ESD discharges, with peak currents up to 100 Amps, and an ESD protection level of up to 20kV, according to the IEC-61000-4-2 (ESD) international standard.
The JAN1N6117A is primarily used in consumer electronic devices, appliances, and portable electronic devices, such as phones, personal digital assistants (PDAs), video game consoles, TV receivers, and digital set-top boxes, as well as in automotive applications. It can also be used in any application that needs low capacitance ESD protection. Its low capacitance allows it to be used in high-speed circuits that require ESD protection.
The JAN1N6117A works by using a Bi-CMOS circuit with ESD protection diodes connected to the gates of the internal MOSFETs. When an ESD voltage is applied to the device, the internal MOSFETs turn on, thus providing ESD protection. The device’s low capacitance helps to protect the vulnerable I/O circuits from damage caused by ESD. The device is also designed to maintain a low clamping voltage, which helps to prevent damage while providing ESD protection. During operation, the device will detect an ESD event and its internal MOSFETs will turn on, redirecting the ESD discharge current away from the input interface and to ground.
In conclusion, the JAN1N6117A is a low capacitance, ESD protection diode developed by Fairchild Semiconductor. It is primarily used in consumer electronic devices, appliances, and portable electronic devices, as well as in automotive applications. It is designed to provide ESD protection up to two I/O ports. Its low capacitance of 8pF makes it ideal for use in high-speed circuits that require ESD protection. The JAN1N6117A works by using a Bi-CMOS circuit with ESD protection diodes connected to the gates of the internal MOSFETs. When an ESD voltage is applied to the device, the internal MOSFETs turn on, thus providing ESD protection. The device is highly tolerant to ESD discharges, with peak currents up to 100 Amps, and an ESD protection level of up to 20kV.
The specific data is subject to PDF, and the above content is for reference
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